Electron Microscopy Study on Irradiation Damage of Xenon-Implanted Yttria-Stabilized Zirconia Single Crystals

向霞,祖小涛,吴继红,朱莎,王鲁闵
2004-01-01
High Power Laser and Particle Beams
Abstract:Transmission electron microscopy (TEM) was utilized to characterize the damage structure and the formation of Xe bubbles in 200 keV Xe~+ -implanted yttria-stabilized zirconia (YSZ) single crystals with different fluences. TEM analysis results showed that the density of defect clusters increased with increasing ion fluence. The density of defect clusters increased rapidly and formed clear interstitial type dislocation loops within dose range from 1×10~(15) Xe~+cm~(-2) to 1×10~(16) Xe~+ cm~(-2), and then the density of defect clusters increased slowly up to a dose of 1×10~(17) Xe~+ cm~(-2). Small bubbles (2~4 nm in diameter) precipitate in the sample at a dose of 1×10~(17) Xe~+ cm~(-2). No amorphization was observed in the selected area diffraction (SAD) pattern. These results also made it clear that no amorphization at about 350 dpa in the Xe~+-implanted sample was mainly caused by the precipitation of Xe bubbles.
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