Abstract:Hafnium oxide (HfO 2 ) thin film has received tremendous research interests as a passivation layer of crystalline silicon (c-Si) due to its thermal stability and positive fixed charges. HfO 2 films were prepared both on P-type and N-type polished c-Si via a remote plasma atomic layer deposition process. Post annealing was carried out in oxygen, atmosphere (Air) and nitrogen (N 2 ) at temperature of 500 °C. Electrical characterization was done through a regular metal-insulator-semiconductor structure and capacitance-voltage measurements. The oxide fixed charge (Q f ) and density of interface traps (D it ) between HfO 2 and c-Si were extracted. Q f and D it reveal the potential of HfO 2 for field effect and chemical passivation, respectively. Effective lifetime measurements by microwave photoconductivity decay in Si wafers passivated with HfO 2 were applied to characterize surface recombination velocity to directly evaluate the overall passivation quality. The impacts of post-annealing gas ambient on passivation qualities on Si by HfO 2 thin films are systematically studied. The results show that N 2 -annealed sample possesses the highest Q f of 1.73 × 10 12 cm −2 and therefore provides the best field effect passivation. Air-annealed sample has lowest D it of 1.0 × 10 12 eV −1 cm −2 and therefore provides the best chemical passivation. Air-annealed sample possesses the highest effective lifetime of 290 μs at injection level of 1 × 10 15 cm −3 , which means that good passivation was obtained for N-type Si wafer passivated with HfO 2 after annealing in Air.

Enhancement of C-Si Surface Passivation Quality by Increasing in Situ H2 Flow Rate

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Surface Passivation of Crystalline Silicon by A-Si:H Thin Films

Demonstration of Excellent Crystalline Silicon Surface Passivation (S < 1.27 cm/s) by High‐Rate DC‐Sputtered Hydrogenated Amorphous Silicon

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Improved Amorphous/crystalline Silicon Interface Passivation for Silicon Heterojunction Solar Cells by Hot-Wire Atomic Hydrogen During Doped A-Si:H Deposition

Improved passivation effect at the amorphous/crystalline silicon interface due to ultrathin SiOx layers pre-formed in chemical solutions

Improving the Performance of Crystalline Si Solar Cell by High-Pressure Hydrogenation*

Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells

Role of Hydrogen Plasma Pretreatment in Improving Passivation of the Silicon Surface for Solar Cells Applications

Effect on passivation mechanism and properties of HfO 2 /crystalline-Si interface under different annealing atmosphere

Significant Improvement of Passivation Performance by Two-Step Preparation of Amorphous Silicon Passivation Layers in Silicon Heterojunction Solar Cells*

Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer

Impact of Surface Treatments on the Passivation Effect for N-Type Crystalline Silicon in Heterojunction Solar Cells

Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation

Detailed Study of SiOxNy:H/Si Interface Properties for High Quality Surface Passivation of Crystalline Silicon

Surface Passivation Properties of ${\textrm{hfo}}_{2}$ Thin Film on N-Type Crystalline Si

Improved Interface Microstructure Between Crystalline Silicon and Nanocrystalline Silicon Oxide Window Layer of Silicon Heterojunction Solar Cells

Effective Hydrogenation Strategies to Boost Efficiency over 20% for Crystalline Silicon Solar Cell with Al2O3/Cu2O Passivating Contact

Role of Hydrogen in Modifying A-Si:H/c-si Interface Passivation and Band Alignment for Rear-Emitter Silicon Heterojunction Solar Cells

Importance of Nanocrystallites in A-Si:H Passivation Layer in Improving the Performance of Silicon Heterojunction Solar Cells