Abstract:One-step metal-assisted chemical etching (MACE) was used to fabricate porous silicon nanowire arrays. Also, the effects of doping level, AgNO3 concentration, and HF concentration on the morphology and structure of porous silicon nanowire were investigated. The results show that the higher doping level is beneficial for etching the silicon wafer and forming silicon nanowire arrays. This is because the higher doping level introduces more impurities and defects on the surface of the silicon wafer, and at the same time, the Schottky barrier between the silicon wafer with the higher doping level and the solution is lower. Thus, the silicon wafer is easier to oxidate to form nanowire arrays. The AgNO3 concentration plays a critical role in the fabrication of the porous silicon nanowire arrays during the one-step MACE process. If AgNO3 concentration is too low or too high, corrosion pits and collapsed clusters of nanowires could form on the surface of the silicon wafer. When AgNO3 concentration was 0.02 mol·L-1, silicon nanowires grew and became longer, eventually forming a porous array of silicon nanowire. In the meantime, as silicon nanowires grew, capillary stress between nanowires caused agglomeration at the top of some nanowires. Furthermore, when HF solution concentration exceeded 4.6 mol·L-1, the length of silicon nanowire increased with increasing HF concentration. Furthermore, a porous structure was formed on top the silicon nanowire, and the porosity of the silicon nanowires increased with increasing HF concentration. This was due to a large number of Ag+ random nucleations at the top of the nanowires, and lateral etching of the silicon nanowires occurred. In the end, the formation process of the porous silicon nanowires is explained by a model based on the experimental phenomena. It is attributed to the deposition of silver ions and the oxidation of dissolved silicon substrates.

Fabrication of bifacial wafer-scale silicon nanowire arrays with ultra-high aspect ratio through controllable metal-assisted chemical etching

FABRICATION OF LARGE-AREA SILICON NANOWIRE ARRAYS FOR SOLAR CELLS

Preparation of Large-Area Uniform Silicon Nanowires Arrays through Metal-Assisted Chemical Etching

Wafer-scale Fabrication of Silicon Nanowire Arrays with Controllable Dimensions

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Porous Silicon Nanowire Arrays Fabrication Through One-Step Metal-Assisted Chemical Etching

OS1503 Development of Highly Ordered Silicon Nanowire Array

Controlled Fabrication of Silicon Nanowires Via Nanosphere Lithograph and Metal Assisted Chemical Etching

Influence Of Fabrication Parameters On The Nanostructure Of Si-Nws Under Hf/Fe(No3)(3) Etching System

Design and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films

Fabrication of Ultra-Thin Silicon Nanowire Arrays Using Ion Beam Assisted Chemical Etching.

Controllable Growth of Silicon Nanowire Arrays Fabricated by Two-Step Silver Catalyzed Chemical Etching

Optical Properties of Ordered Zigzag Silicon Nanowire Arrays Fabricated by Alternate Etching

Design Optimization and Antireflection of Silicon Nanowire Arrays Fabricated by Au-assisted Chemical Etching

Fabrication of silicon nanowire arrays by macroscopic galvanic cell-driven metal catalyzed electroless etching in aerated HF solution.

Lithography-free Fabrication of Silicon Nanowire and Nanohole Arrays by Metal-Assisted Chemical Etching

FABRICATION OF SILICON NANOWIRE (SiNW) ARRAYS AND APPLICATION IN SOLAR CELL

Wafer-scale Fabrication of Uniform Si Nanowire Arrays Using the Si Wafer with UV/Ozone Pretreatment

Ordered Arrays Of Vertically Aligned [110] Silicon Nanowires By Suppressing The Crystallographically Preferred Etching Directions

Wet chemical etching silicon wafer with low-reflection and super-hydrophobicity

Fabrication and Properties of Large-Area Silicon Nanowire Arrays