ITO/polymer/Al from diode-like to memory device: electroforming, multilevel resistive switching, and quantum point contact
Guilherme Severino Mendes de Araújo,Helder Nunes da Cunha,João Mariz Guimarães Neto,Cleânio da Luz Lima,Alexandre de C. Maciel,Ángel Alberto Hidalgo,Maria Leticia Vega
DOI: https://doi.org/10.1007/s10854-024-11952-7
2024-01-22
Journal of Materials Science Materials in Electronics
Abstract:In this work, we present a study on the resistive memory properties of ITO/MEH-PPV/Al devices. The pristine diode-like device, highly resistive, needs an electroforming process to turn the device into a memory with resistive switching. During electroforming, I-V sweeps are described using Schottky Emission (SE) and Fowler-Nordheim (FN) models, resulting in an injection barrier around ~ 0.8 to 0.9 eV that may be associated with injection through polymer/Al interface. At high resistance sate (HRS), the linear coefficient of the curve is at low voltages and present a transition to when the device is close to switching voltage. At low resistance state (LRS), we observe up to the negative differential resistance (NDR). In our devices, exploring the reverse bias NDR at different levels, it is possible to observe multilevel conducting states in direct bias sweeps (opposite polarizations), unlike unipolar memories, that show multilevel states when exploring NDR at different levels in the same polarization direction. I-V multilevel sweeps are in accordance with the Quantum Point Contact Model (QPC). The resulting fitting parameters show that the number of filaments increases from one (at HRS) to 70 as multilevel state approach LRS. Also, the t gap decreases from to . The conductance found in terms of ( ) was up to , compatible with values found from QPC model on I-V multilevel. Our results are consistent with the soft breakdown of an Al 2 O 3 oxide layer at the polymer/metal interface.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied