Abstract:High-k oxide dielectric films are indispensable for low-power-consumption oxide thin-film transistors (TFTs) applied in advanced and portable electronics. However, high-quality oxide dielectric films prepared by solution process typically require sophisticated processes and long thermal annealing time, severely limiting both the throughput manufacturing and cost-effectiveness. In this study, the influence of different heating-up methods on the surface morphology and dielectric properties was systematically investigated. Gradient heating-up method could not only substantially improve the surface morphology and quality of high-k ZrO 2 films but also efficiently shorten the annealing time. The gradient heating-up process was further designed on the basis of thermal behavior of the xerogel-like precursor, which successfully realize the preparation of high-quality ZrO 2 films with an annealing time of 5 min (i.e. the efficiency of thermal treatment increased by about 89%). The ZrO 2 film presented excellent dielectric properties, including a low leakage current density of ~10 −8 A/cm 2 (at 2 MV/cm), a large areal capacitance of 169 nF/cm 2 and a high dielectric constant of 20.41 (1 MHz). Furthermore, InSnZnO TFT based on the ZrO 2 gate dielectrics shows an acceptable device performances, such as a high carrier mobility of 2.82 cm 2 /V s, a high on/off current ratio of ~10 5 and a low subthreshold swing of 0.19 V/decade at a low operation voltage of 5 V. This work provide a highly promising approach to fabricate high-quality solution-processed high-k oxide dielectric films employed for large-scale and low-power-consumption electronics.

High-k Titanium–aluminum Oxide Dielectric Films Prepared by Inorganic–organic Hybrid Solution

An investigation into ultra-thin pseudobinary oxide (TiO 2 ) x (Al 2 O 3 ) 1-x films as high- k gate dielectrics

Effect of Content Ratio on Solution-Processed High-K Titanium-Aluminum Oxide Dielectric Films

Thermal Stability And Electrical Properties Of Titanium-Aluminum Oxide Ultrathin Films As High-K Gate Dielectric Materials

Structural and Electrical Characteristics of Al-doped TiO2 High-K Gate Dielectric Grown by Atomic Layer Deposition

Development of High-K Hafnium–aluminum Oxide Dielectric Films Using Sol–gel Process

Surface Modification on Solution Processable ZrO2 High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors

Preparation of Low-Temperature Solution-Processed High-κ Gate Dielectrics Using Organic–Inorganic TiO2 Hybrid Nanoparticles

Oxygen incorporated solution-processed high-kappa La2O3 dielectrics with large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films

High-k materials processing: Atomic layer deposition of Al 2O3

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Preparation And Characterization Of Ato/Ps Bilayer Films With Superior Hydrophobicity

Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

Efficient gradient heating-up approach for rapid growth of high-quality amorphous ZrO2 dielectric films

Synthesis, Characterization and Properties of ATO/potassium Silicate Film Prepared by Twice Spray Pyrolysis

Preparation and Characterization of ATO/PS Bilayer Films with Superior Hydrophilicity

Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlOx/TiOy Nanolaminates

Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices

A Low-Temperature, Solution-Processed High-K Dielectric for Low-Voltage, High-Performance Organic Field-Effect Transistors (Ofets)

Fabrication of Large Area of Anodic Aluminum Oxide Ultrathin Film Directly Onto an Ito Electrode with A Ti Buffer Layer

Research on complex film of organic conductive polymer and anatase TiO_2