Abstract:Organic: inorganic hybrid dielectric materials have attracted significant attention owing to their capacity to integrate the mechanical and electrical characteristics of organic and inorganic components. This paper presents the deposition of high-performance polyvinylpyrrolidone (PVP): hafnium oxide (HfO2) hybrid dielectric films at low temperature using the sol-gel method. Initially, the influence of precursor components on the surface morphology of single-component dielectric films was investigated. It is observed that the addition of FSO and acetic acid can result in smoother and more uniform surfaces for PVP and HfO2, respectively. Furthermore, based on these findings, we successfully prepared PVP:HfO2 hybrid dielectric films with surface roughness below 1 nm, high transmittance above 95% in the visible range (400-760 nm), and wide optical bandgaps exceeding 5.3 eV. The formation of PVP:HfO2 cross-linked network was identified through FTIR analysis, and a mechanism was proposed. Moreover, MIM devices were fabricated to determine the insulating performance of dielectric films. We found that the PVP:HfO2 hybrid dielectric films exhibit a significant reduction in leakage current density and a substantial increase in relative dielectric constant compared to the single-component dielectric films. In addition, with the increase in PVP concentration, the leakage current density first decreases and then increases, while the relative dielectric constant first increases and then decreases. After optimization, 0.5 wt% PVP:HfO2 hybrid dielectric film exhibits a low leakage current density of 5.89x10-8 A/cm2 @1 MV/cm and a high relative dielectric constant of 32.54. PVP:HfO2 hybrid dielectric films exhibit tremendous potential for applications in the realm of high-performance transparent electronic devices.

Effect of Content Ratio on Solution-Processed High-K Titanium-Aluminum Oxide Dielectric Films

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Thermal Stability And Electrical Properties Of Titanium-Aluminum Oxide Ultrathin Films As High-K Gate Dielectric Materials

An investigation into ultra-thin pseudobinary oxide (TiO 2 ) x (Al 2 O 3 ) 1-x films as high- k gate dielectrics

High-k Titanium–aluminum Oxide Dielectric Films Prepared by Inorganic–organic Hybrid Solution

Effect of Technological Parameters on Specific Capacitance of Al-Ti Composite Oxide Films

The Effect of Anodizing Temperature on the Structure and Electrical Properties of Al−Ti Composite Oxide Film

Development of High-K Hafnium–aluminum Oxide Dielectric Films Using Sol–gel Process

High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

Effect of Al<SUB>2</SUB>O<SUB>3</SUB> Content on Dielectric Properties of Al<SUB>2</SUB>O<SUB>3</SUB>/LiTaO<SUB>3</SUB> Composite Ceramics

Preparation of High Dielectric Constant Composite Oxide Films for Aluminum Electrolytic Capacitors

Structural and Electrical Characteristics of Al-doped TiO2 High-K Gate Dielectric Grown by Atomic Layer Deposition

Hfo2-Tio2 Ultra-Thin Gate Dielectric by Rf Sputtering

Effect of Al2O3 Content on Dielectric Properties of Al2O3/LiTaO3 Composite Ceramics

Solution-processed Transparent PVP:HfO2 Hybrid Dielectric Films with Low Leakage Current Density and High K

Electrical Characteristics of SrTiO3/Al2O3 Laminated Film Capacitors

Dielectric property and self-repairing capability of silicon and titanium co-doped amorphous alumina thin films prepared by sol–gel technology

Interface State Density Modification and Dielectric Reliability Enhancement of ErTi x O y /Al 2 O 3 /InP Laminated Stacks

Preparation and Properties of TiO2/Al2O3 Stacked High k Gate Dielectric Films

Resistance of amorphous TiAlCrZrSi/polyimide high entropy alloy films to atomic oxygen erosion

Effect of Titanium Content on Dielectric and Energy Storage Properties of (Pb,La,Sr)(Zr,Sn,Ti)O3 Ceramics