Abstract:Aliovalent dopant codoped rutile–TiO 2 materials have garnered attention due to their excellent performance properties, characterized by low loss tangent (tanδ), high dielectric permittivity (ε′), and stable ε′ over a broad temperature range. This performance is primarily due to the electron−pinned defect−dipoles (EPDDs) of the complex defects Ti 3+ – Ti 3+ B Ti . Notably, the excellent dielectric properties in Zr x Ta 2.5% Ti 0.975− x O 2 (Zr–TTO) ceramics can be achieved using the traditional mixed oxide method without the EPDDs, due to the absence of A 3+ (acceptor doping ions). Instead, the existence of localized free electrons and oxygen vacancies ( ) in Zr–TTO structures, due to doping ions and the sintering process, was confirmed by X–ray photoelectron and Raman spectroscopies. These ceramics exhibited ε′~ 2 × 10 4 and tanδ < 0.03 at 1 kHz and 25 °C in the 2.5–10%Zr–TTO samples. Moreover, all ceramics demonstrated a maximum ε′ change (∆ε′) of less than ±15% over the temperature range suitable for X7R and X8R type ceramic capacitors. Significantly, the change in ε′ related to relative humility was calculated to be less than ±0.5% over the range of 50–95% RH, indicating the environmental stability of the dielectric properties, which is essential for capacitor applications. Investigations suggested that at least four mechanisms contributed to this system: the intrinsic effect of ionic polarization, Ti 4+ · e – – – Ti 4+ · e – and Ti 4+ · e – – defects, interfacial polarization at insulating grain boundaries, and non–Ohmic contact between the surface sample and the metal electrode.

Grain-boundary engineering inducing thermal stability, low dielectric loss and high energy storage in Ta+Ho co-doped TiO2 ceramics

Colossal dielectric behavior of (Ho, Ta) co‐doped rutile TiO2 ceramics

Thermal stable and ultralow dielectric loss in (Gd0.5Ta0.5) Ti1-O2 giant permittivity ceramics by defect engineering

Controllable low-temperature flash sintering and giant dielectric performance of (Zn, Ta) co-doped TiO2 ceramics

A new acceptor-donor co-doping TiO 2 -based ceramics with superior dielectric property and insulation performance

Giant dielectric response and relaxation behavior in (Tm + Ta) co-doped TiO 2 ceramics

Highly Stable Energy-Storage Performance of Donor-Acceptor Co-Doped TiO2 Films

Realizing high energy density and efficiency simultaneously in (Bi0.5Na0.5)0.7Sr0.3TiO3-based ceramics via introducing linear dielectric CaTiO3

Colossal Dielectric Permittivity in (al+nb) Co-Doped Ba0.4Sr0.6TiO3 Ceramics

High energy storage and colossal permittivity CdCu3Ti4O12 oxide ceramics

Colossal permittivity and defect-dipoles contribution for Ho0.02Sr0.97TiO3 ceramics

Mechanisms of enhanced performance in Zr4+/Ta5+ codoped rutile–TiO2 ceramics via broadband dielectric spectroscopy

Defect Dipoles Induced High‐energy Storage Density in Mn‐doped BST Ceramics Prepared by Spark Plasma Sintering

High-performance Colossal Permittivity Behaviour Persists to Ultralow Temperature in Co+Ta Co-Doped SnO2: A Spin-Defect Mediated Superstable Large Electronic Moment of Defect-Dipole

Optimized energy storage performance in (Ba0.8Sr0.2)TiO3-based ceramics via Bi(Zn0.5Hf0.5)O3-doping

Improving Energy Storage Performance of Barium Titanate-Based Ceramics by Doping MnO2

Dielectric Properties of (yb0.5ta 0.5)xti1−xo2 Ceramics with Colossal Permittivity and Low Dielectric Loss

Enhanced dielectric properties and improved thermal stability in TiO 2 -based ceramics by Cu and Nb co-doping

Ag+/W6+ Co-Doped Tio2 Ceramic With Colossal Permittivity And Low Loss

Tuning enhanced dielectric properties of (Sc3+–Ta5+) substituted TiO2 via insulating surface layers

A comparative study of microstructure and electrical properties of (Al, Nb) co-doped TiO2 ceramics by different sintering methods