Abstract:Considerable efforts have been made to explore high-dielectric constant ceramics for their promising applications as high-energy density capacitors and fine metal-oxide-semiconductor field effect transistors. Here, we investigated the colossal dielectric behaviors of TiO2-x ceramics influenced by defect dipoles introduced by oxygen vacancies and Ti3+. As temperature decreases from room temperature, three thermally activated relaxations were observed. A room temperature relaxation (R3) was attributed to Maxwell-Wagner relaxation due to the electrode/sample contact. A low-temperature Maxwell-Wagner relaxation (R1) featuring nearly constant loss behavior was associated with frozen carriers. The middle-temperature relaxation (R2) was verified to be the polaron relaxation composed of two segment contributions: polaron hopping and polaron reorienting. The defect dipoles gradually changed from a disordered state into an ordered state in external electric field when temperature falls and reaches a frozen-in state below 217 K. The ordered phase will turn into disordered again when temperature increases to 217 K due to thermal perturbation corresponding to a phase transition. These results indicate that the colossal dielectric constant properties of TiO2 system are attributed to defect dipole clusters. This work exhibits a way to identify the dipole effect. Moreover, we found that the dielectric properties of TiO2-x ceramics hardly depend on temperature and frequency. This implies that TiO2-x ceramics is a kind of promising colossal dielectric materials which can work at various temperatures.

Giant dielectric response and relaxation behavior in (Tm + Ta) co-doped TiO 2 ceramics

Colossal Dielectric Permittivity in (al+nb) Co-Doped Ba0.4Sr0.6TiO3 Ceramics

Colossal Dielectric Behavior of Co-doped TiO2 Ceramics: A Comparative Study

Colossal Dielectric Properties in (ta0.5al0.5)xti1−xo2 Ceramics

Colossal Dielectric Performance of Pure Barium Titanate Ceramics Consolidated by Spark Plasma Sintering

Colossal dielectric behavior of (Ho, Ta) co‐doped rutile TiO2 ceramics

Large-size-mismatch co-dopants for colossal permittivity rutile TiO 2 ceramics with temperature stability

Grain-boundary engineering inducing thermal stability, low dielectric loss and high energy storage in Ta+Ho co-doped TiO2 ceramics

Thermal stable and ultralow dielectric loss in (Gd0.5Ta0.5) Ti1-O2 giant permittivity ceramics by defect engineering

Colossal Permittivity Behavior and Its Origin in Rutile (Mg1/3ta2/3)xti1-Xo2

Evidences of Grain Boundary Capacitance Effect on the Colossal Dielectric Permittivity in (nb + In) Co-Doped TiO2 Ceramics

Effect of Defect Dipoles on the Colossal Dielectric Behaviors of TiO2-x Ceramics

Colossal permittivity and defect-dipoles contribution for Ho0.02Sr0.97TiO3 ceramics

Synthesis and characterization of (sm, Al) co-doped SrTiO3 with giant dielectric constant and low dielectric loss through defect engineering design

Dielectric Properties of (yb0.5ta 0.5)xti1−xo2 Ceramics with Colossal Permittivity and Low Dielectric Loss

Origin of Colossal Dielectric Response in (in + Nb) Co-Doped TiO2 Rutile Ceramics: a Potential Electrothermal Material

Colossal Permittivity, Low Dielectric Loss, and Good Thermal Stability Achieved in Ta-doped BaTiO3 by B-site Defect Engineering

Giant Permittivity Up to 100 MHz in La and Nb Co‐doped Rutile TiO2 Ceramics

Ionic Conduction, Colossal Permittivity and Dielectric Relaxation Behavior of Solid Electrolyte Li3xLa2/3-xTiO3 Ceramics

Controllable low-temperature flash sintering and giant dielectric performance of (Zn, Ta) co-doped TiO2 ceramics

Nonlinear I–V Behavior in Colossal Permittivity Ceramic:(Nb+in)co-Doped Rutile TiO2