Abstract:Chalcopyrite copper-indium-gallium diselenides (CIGS) have emerged as promising materials with remarkable electronic properties and potential applicability to high-efficiency solar cells. The crystal and electronic structures of CIGS can be continuously tuned from their initial states under pressure. Although pressure-induced band gap closure in CIGS has been predicted in extensive theoretical studies, it has not been supported by experimental evidence. Here, we comprehensively investigate the pressure-dependent optical, electronic, and structural properties of Cu(In0.7Ga0.3)Se2 up to 42.6 GPa. Our experimental results reveal an irreversible electronic transition from the semiconducting to the metallic state at 14.3 GPa. Under compression, the Cu(In0.7Ga0.3)Se2 structure evolves from a tetragonal I4̅2d phase to an orthorhombic Pna21 phase, which has not been previously reported in chalcopyrite. More intriguingly, the Pna21 phase is irreversible and possesses smaller Cu-Se and In/Ga-Se bond lengths and a smaller Cu-Se-Cu bond angle than the I4̅2d phase. Density functional theory calculations indicate a lower enthalpy of the Pna21 phase than that of the I4̅2d phase at pressures above 10.6 GPa. Meanwhile, density of states calculations illustrate that metallization arises from the overlap of the Se p and Cu d orbitals as the bond length reduces. This pressure-induced behavior could facilitate the development of novel devices with various phenomena involving strong coupling of the mechanical, electrical, and optical properties of chalcopyrite.

The Effect of N2 Gas Pressure During the Rapid Thermal Process on the Structural and Morphological Properties of Cigs Films

Effects Of Na Incorporated At Different Periods Of Deposition On Cu(In, Ga)Se-2 Films

Influence of Carrier Gas on Microstructures and Morphologies of Cu(In_(1-x)Ga_x)Se_2 Films

Influences of Flux of Carrier Gas on Microstructure and Morphologies of Cigs Films

Effect of Se Vapor Concentration on Cigs Film Preparation

An Investigation on Preparation of CIGS Targets by Sintering Process

Influence of Bilayer Precursor Films on Structure and Morphology of CIGS Films

Influences of Na on Sintering of Cu(In, Ga)Se-2 Quaternary Ceramic Targets

Effect of the hydrogen annealing on the properties of Mo/CuIn1-xGaxSe2/CdS solar cells junction

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

EFFECT OF ANNEALING ON THE CuInS2 THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION

Research progress on synthesis of CuIn1-x Gax Se2 nanoparticles

Preparation and performances of high density Cu(In, Ga)Se3 ceramic targets

The Formation Mechanism of Cu(In0.7Ga0.3)Se-2 Nanoparticles and the Densification Trajectory of the Se-Rich Quaternary Target by Hot Pressing

Metal Precursor Influence On Performance Of Cuin1-Xgaxse2 Films

Fabrication of Cu(In,Ga)Se-2 Thin Films from Nanoparticles by Non-Vacuum Mechanochemical Method and Rapid Thermal Annealing Process

Metal Precursor Influence on Performance of Culn1−xGaxSe2 Films

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Pressure-Induced Irreversible Metallization Accompanying Phase Transition of Chalcopyrite Cu(In0.7Ga0.3)Se2

Preparation of Cu(In,Ga)Se2 Thin Film by Solvothermal and Spin-coating Process

Se VAPOR SELENIZATION METHOD PARAMETERS FOR DEPOSITION OF CIGS FILMS (Ⅰ) INFLUENCES OF Ar FLUX ON MICROSTRUCTURE AND MORPHOLOGIES OF CIGS FILMS