Abstract:Understanding the weak thermal links in support legs of transition edge sensors (TES) is essential for developing highly sensitive TES bolometers for cosmic microwave background (CMB) detection. The thermal and electrical properties of the TES are usually characterized by I-V tests with superconducting quantum interference devices (SQUIDs) in laboratories before being deployed into a telescope system. In this work, a method for testing the electrothermal properties based on R-T tests is proposed to obtain the critical temperature Tc, saturation power Psat and thermal conductance G of a TES. This method relies on that the weak thermal links of a biased TES in a non superfluid state cause the TES temperature (TTES) to be higher than the base temperature (Tb). So the Tb value at the transition edge in Tb drop test relies on the set current. The relationship between the thermal power PTES and the Tb value at the transition edge can be obtained, and parameters can be fitted by thermal conduction equation. Numerical calculations of the superconducting phase transition of the device in R-T tests were conducted, and then experimental results were obtained that reflect the expected results. The I-V testing was also conducted on the same sample, and the comparison results reflected the practicability of this method. This approach provides a simpler and more cost-effective alternative to I-V method for obtaining the electrothermal properties of TES, enriching the characterization methods.

Simplified Two-Fluid Current–voltage Relation for Superconductor Transition-Edge Sensors

Device modeling of superconductor transition edge sensors based on the two-fluid theory

Current distribution and transition width in superconducting transition-edge sensors

Full-Chip Thermal Simulation Of Superconductor Transition-Edge Sensor Circuits

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electrothermal modelling of through silicon via (TSV) interconnects

Analysis And Simulation Of Ac-Biased Tes Circuits

Mapping TES Temperature Sensitivity and Current Sensitivity as a Function of Temperature, Current, and Magnetic Field with IV curve and Complex Admittance Measurements

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Cross-Coupling First-Order Gradient Superconducting Quantum Interference Device for Current Sensing

Modeling Iridium-Based Trilayer and Bilayer Transition-Edge Sensors

A Two-Dimensional Resistor Network Model for Transition-Edge Sensors with Normal Metal Features

A configurable ultra-low noise current source for transition-edge sensor characterization

Probing TES Transitions by Lead-Position- Dependent Resistance Measurement

Electrothermal Properties Characterization of Transition Edge Sensor Bolometers Based on R-T Tests

Characterization of a Superconducting NbSi Transition Edge Sensor for TeSIA

Simulation and optimization of conductor structural parameters of free-space hall-effect current sensor

Operation of transition edge sensors in a resistance locked loop

Electrical Characteristics of Superconducting Ti Transition Edge Sensors

Characterization of a Free-Standing Membrane Supported Superconducting Ti Transition Edge Sensor