Abstract:Two-dimensional hexagonal boron nitride ( h -BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h -BN is a precondition. The synthesis of h -BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h -BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h -BN on different metal substrates. On the frequently utilized Cu substrate, h -BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h -BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h -BN growth processes is predicted, paving the way for guided growth protocol design.

Growth and Etching of Monolayer Hexagonal Boron Nitride

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Aligned Growth of Hexagonal Boron Nitride Monolayer on Germanium

Growth of Polar Hexagonal Boron Nitride Monolayer on Nonpolar Copper with Unique Orientation.

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Three-leaf Dart-Shaped Single-Crystal BN Formation Promoted by Surface Oxygen

Direct Growth of Hexagonal Boron Nitride on Epitaxial Graphene

Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

Dynamic Observation of In-Plane H-Bn/graphene Heterostructures Growth on Ni(111)

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

Structure Evolution of Hbn Grown on Molten Cu by Regulating Precursor Flux During Chemical Vapor Deposition

Growth and characterization of uniformly distributed triangular single-crystalline hexagonal boron nitride grains on liquid copper surface

Step Flow Versus Mosaic Film Growth in Hexagonal Boron Nitride

Understanding vapor phase growth of hexagonal boron nitride

Surface etching during epitaxial h-BN growth on graphene

Growth mechanisms of monolayer hexagonal boron nitride (h-BN) on metal surfaces: theoretical perspectives

Towards the growth of single-crystal boron nitride monolayer on Cu

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Atomic-Scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control