Characterization of SiC Nanowires Prepared on C/C Composite Without Catalyst by CVD

Yi-cheng Ge,Yun-qi Liu,Shuai Wu,Huang Wu,Pei-ling Mao,Mao-zhong Yi
DOI: https://doi.org/10.1016/s1003-6326(15)63962-0
2015-01-01
Abstract:SiC nanowires were prepared on C/C composite surface without catalyst by chemical vapor deposition (CVD) using CH3SiCl3 as precursor. SEM images of the CVD-product reveal that some long nanowires have grown to tens of micrometers with some gathered as a ball. Some short nanowires agglomerate like chestnut shell with many thorns accompanied by some deposited nano-particles. XRD, Raman-spectrum and FTIR patterns indicate that the product is a typical β-SiC. TEM images show that the nanowires have a wide diameter range from 10 to 100 nm, and some thin nanowires are bonded to the thick one by amorphous CVD-SiC. A SiC branch generates from an amorphous section of a thick one with an angle of 70° between them, which is consistent with the [111] axis stacking angle of the crystal. SAED and fast Fourier transform (FFT) patterns reveal that the nanowires can grow along with different axes, and the bamboo-nodes section is full of stacking faults and twin crystal. The twisted SiC lattice planes reveal that the screw dislocation growth is the main mechanism for the CVD-SiC nanowires.
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