Abstract:Abstract In this study, the high-density SiC/SiO 2 core–shell nanowires were synthesized on the nickel coated SiO 2 (100 nm)/Si substrate by chemical vapor deposition (CVD) method with ferrocene precursor at temperature 1000 °C compared to previous studies (1300–1600 °C). The present work provides an efficient strategy for the production of SiC/SiO 2 nanowires with uniform morphology and good optical properties, where the Ni layer plays important roles for this fabrication at low temperature which reduces the decomposition temperature of hydrocarbon gases and improves the growth quality of SiC nanowires. The as-synthesized SiC/SiO 2 nanowires consist of single crystal 3C structures as well as 3C structures with defects along [111] direction. In the photoluminescence (PL) spectrum, the SiC/SiO 2 core–shell nanowires revealed an obvious blueshift. The blueshift is due to the formation of nanoscale silicon carbide polytypism caused by the stacking faults in 3C–SiC and the nanoscale polytypism also caused the transition from indirect to direct bandgap which explains why the stacking faults percentage in SiC confirmed from X-ray diffraction (XRD) is 19%, but ultimately makes the strongest emission intensity. Finally, the PL characteristics are further improved by changing the diameter of the SiC nanowire and etching and an approximate model followed by the vapor–liquid–solid (VLS) mechanism was proposed to explain the possible growth mechanism of the SiC/SiO 2 nanowires.

Large-scale synthesis of SiC/PyC core-shell structure nanowires via chemical liquid-vapor deposition

Ultrafast growth of single-crystalline Si nanowires

Simultaneous growth of SiC nanowires, SiC nanotubes, and SiC/SiO2 core–shell nanocables

Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature

Morphology-Controlled Synthesis of SiC Nanowires by Catalyst-Assisted Pyrolysis of Polymeric Precursor

Core‐shell SiC/SiO2 Heterostructures in Nanowires

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Synthesis of Silicon Carbide Nanowires by Solid Phase Source Chemical Vapor Deposition

Silicon nano-wires grown at low temperature

Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties.

Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

Preparation of Silicon Carbide Nanowires and Nanochains Using Chemical Vapor Deposition Method

Effects of HfC/PyC Core-Shell Structure Nanowires on the Microstructure and Mechanical Properties of Hf1-xZrxC Coating

Large Areas of Centimeters-Long SiC Nanowires Synthesized by Pyrolysis of a Polymer Precursor by a CVD Route

Carbide assisted in-suit growth and formation mechanism of SiC nanowires on the surface of defined carbon fibers

Synthesis and Characterization of SiC Nanowires Using Silicon Evaporation

Theoretical and experimental study of the mechanism for preparation of SiC nanowires by carbothermal reduction

Preparation and mechanical behaviors of multiscale SiC nanowires/carbon fiber reinforced silicon oxycarbide ceramic composites

Continuous Preparation of SiC Nanowires Using Fluidized Bed Chemical Vapor Deposition Method

Synthesis of SiC Nanowires in Fluidized Bed and Its Microstructure