Abstract:As a non-volatile semiconductor memory technology, phase-change memory has a wide range of application prospects as a result of the excellent comprehensive performance. In this paper, multilayer thin films based on Sb2Te3 material were designed and prepared by inserting the Sn15Sb85 layer. The thermal and electrical properties of superlattice-like Sb2Te3/Sn15Sb85 phase-change films can be adjusted by controlling the thickness ratio of Sb2Te3/Sn15Sb85. In comparison to the monolayer Sb2Te3 film, the multilayer layer Sb2Te3/Sn15Sb85 materials have a higher crystallization temperature, larger crystallization activation energy, and longer data lifetime, indicating the great improvement of thermal stability. The changes in the phase structure and vibrational modes of multilayer Sb2Te3/Sn15Sb85 films were characterized by X-ray diffraction and Raman spectroscopy, respectively. The presence of Sn15Sb85 layers restrains grain growth and refines the grain size. The multilayer Sb2Te3/Sn15Sb85 films exhibit better surface flatness, smaller surface potential undulation, and lower thickness variations than single-layer Sb2Te3. Phase-change memory cells based on the [Sb2Te3 (1 nm)/Sn15Sb85 (9 nm)]5 thin film has a lower threshold voltage (1.9 V) and threshold current (3.1 μA) compared to the Ge2Sb2Te5 film. Meanwhile, the electrical heating model of a phase-change memory cell based on a [Sb2Te3 (1 nm)/Sn15Sb85 (9 nm)]5 multilayer structure was established by multiphysics coupling analysis, proving the great improvement in heat transfer performance and efficiency. The experimental and theoretical studies confirm that the insertion of the Sn15Sb85 layer can significantly improve the crystallization properties of Sb2Te3 films, paving the way for optimizing the phase-change materials by regulating the microstructural parameters.

Influence of N-doping on the Thermal Stability and Switching Speed of Zn15Sb85 Phase Change Material

Influence of Nitrogen Doping Upon the Phase Change Characteristics and Optical Band Gap of Sb2te3 Thin Films

Phase transition behaviors and thermal conductivity measurements of nitrogen-doped Sb2Te3 thin films

Nanoarchitectonics of Binary Semiconductor Sb–Y for the Application of Phase-Change Memory Device

Investigation of phase transition behaviors of the nitrogen-doped Sb-rich Si-Sb-Te films for phase-change memory

Improved Thermal Stability and Fast Phase Change Speed of Y-doped Sb7Se3 Thin Film for Phase Change Memory Applications

Simultaneously achieving high performance of thermal stability and power consumption via doping yttrium in Sn15Sb85 thin film

Influence of samarium modification on the phase-change performance and phase structure of tin antimonide

Simultaneously Good Stability and High Speed Based on Oxygen-Doped Zn15Sb85 Material

Ultrafast Phase Change Speed and High Thermal Stability of Antimony and Zinc Co-Sputtering Thin Film for Phase Change Random Access Memory Application

Nitrogen-doped Sb-rich Si–Sb–Te Phase-Change Material for High-Performance Phase-Change Memory

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb2Te3 Phase-Change Thin Film by Inserting Sn15Sb85 Layers.

Samarium Addition-Mediated Simultaneous Achievement of Excellent Resistance Drift and Superior Thermal Stability in Phase-Change Compound Antimony-Selenium Thin Film

Performance Improvement of Sb Phase Change Thin Film by Y Doping

The Study of Phase Change Properties of Sb70Se30 Thin Film with Scandium and Aluminum Doping

Zn-doped Sb70Se30 Thin Films with Multiple Phase Transition for High Storage Density and Low Power Consumption Phase Change Memory Applications

Improved phase change behavior of Sb 3 Te material by ZnSb doping for phase change memory

The fabrication and properties of N-doped Sb2Te3 phase-change materials prepared by pulsed laser deposition

Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Improved Thermal Stability and Power Consumption Performances of Ge1Sb9 Phase Change Thin Films Via Doping Yttrium