Simultaneously achieving high performance of thermal stability and power consumption via doping yttrium in Sn15Sb85 thin film

Shengqing Xu,Weihua Wu,Han Gu,Xiaochen Zhou,Xiaoqin Zhu,Jiwei Zhai,Sannian Song,Zhitang Song
DOI: https://doi.org/10.1088/1361-6528/acc80f
IF: 3.5
2023-03-30
Nanotechnology
Abstract:The effects of yttrium dopants on the phase change behaviour and microstructure of Sn15Sb85 films have been systematically investigated. The yttrium-doped Sn15Sb85 film has the higher phase transition temperature, ten-year data retention ability and crystallization activation energy, which represent the great improvement of thermal stability and data retention. X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy reveal that the amorphous Sn and Y components restrict the grain growth and decrease the grain size. Raman mode typically associated with Sb are altered when the substance crystallized. Atomic force microscopy results show that the surface morphology of the doped films becomes smoother. T-shaped phase change storage cells based on yttrium-doped Sn15Sb85 films exhibit the lower power consumption. The results demonstrate that the crystallization characteristics of Sn15Sb85 film can be tuned and optimized through yttrium dopant for the excellent performances of phase change memory.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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