Development of Nanopillar Arrays Nanopatterning Without Lift‐Off for Transferable GaN‐Based μLEDs
Nabil Labchir,Saber Hammami,Kilian Baril,Maya Wehbe,Sebastien Labau,Jerome Reche,Camille Petit‐Etienne,Marie Panabière,Pierre‐Marie Coulon,Blandine Alloing,Daniel Pino Munoz,Jesus Zuniga‐Perez,Patrice Gergaud,Matthew Charles,Cécile Gourgon
DOI: https://doi.org/10.1002/admt.202400166
IF: 6.8
2024-05-26
Advanced Materials Technologies
Abstract:This report focuses on the fabrication of multi‐layer nanopillar arrays using nanoimprint lithography and plasma etching. Then, freestanding μLEDs with smooth surfaces are successfully formed on nanopillar arrays by following a bottom‐up approach using metal–organic vapor phase epitaxy (MOVPE). These μLEDs are easily transferred onto a silicon substrate by combining adhesive tape and metal–metal bonding steps. The mass production of μLEDs requires an upscaling approach on 200 mm wafers, which implies the deployment of a technology that achieves zero defectivity without liftoff. In this report, Nanoimprint lithography (NIL) processing is successfully optimized for nanostructuring GaN‐based Silicon‐On‐Insulator (SOI) substrates. The etching of SiO2/GaN/AlN/Si/SiO2 layers using different plasmas is conducted and multi‐layer nanopillars 100–200 mm in diameter are fabricated. This approach generates zero‐defect arrays of pillars, which is particularly advantageous for the growth process. In addition, the SiO2 at the bottom of the pillar allows it to twist during the subsequent GaN regrowth, as this layer becomes soft at the growth temperature >1000 °C. This ability to deform enables a coalescence of pillars into layers with reduced dislocation density. As a result, high‐quality GaN microplatelets and μLEDs are grown via a bottom‐up approach based on pendeoepitaxy using metal–organic vapor phase epitaxy (MOVPE). The fabricated μLEDs have a very smooth surface with a roughness of 0.6 nm which facilitated the implementation of an easy and simple transfer protocol. Adhesive tape and metalmetal bonding, are used to bond the μLEDs onto a metal‐coated silicon substrate. The reported findings offer exciting new insights into the development of high‐performance displays.
materials science, multidisciplinary