Abstract:To be compatible with the mainstream nano CMOS technology and to further increase the density and to reduce power consumption of non-volatile memory, high-k dielectric will become the major technology option for next generation non-volatile memory technology. To ensure the required retention time and to maintain the scalability of floating gate memory transistor, the charge store in future memory transistor should be accompanied with the high-k insolated metal or conductive clusters, islands, or nano-particles. This work proposes a simple method to fabricate high-k isolated metal cluster array. An HfO2/Au/HfO2 stack was first grown by using atomic layer deposition (ALD) and thermal evaporation, respectively, for HfO2 and Au film deposition. After a high-temperature thermal annealing, a number of HfO2-buried Au islands with diameter of about 5 to10nm were obtained. Capacitance–voltage (C–V) measurements show that the charge storage characteristics of the Au-embedded HfO2 structure were affected greatly by the annealing conditions. Depending on the annealing temperature (it should be governed by thickness of Au layer also), the thermal annealing may lead to the formation of Au islands/clusters, the improvement of HfO2 blocking property as a result of defect removal, or the deterioration of the blocking property of HfO2 due to the crystallization of HfO2 film. Process optimization should be conducted for further improving the charge localization characteristics.

Effect of Pre-annealing to Blocking Oxide on the Performance of Dual Trapping-layer Engineered Charge Trapping Memory

Effect of Annealing Atmosphere on the La2O3Nanocrystallite Based Charge Trap Memory

Improved Memory Characteristics by NH 3 Post Annealing for ZrO 2 Based Charge Trapping Nonvolatile Memory

Effects of Thermal Annealing on the Charge Localization Characteristics of Hfo2/Au/Hfo2 Stack

Improved Memory Characteristics by NH3Post Annealing for ZrO2Based Charge Trapping Nonvolatile Memory

Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO2 and Segmented Fabrication

Optimization of Hfo2 Growth Process by Atomic Layer Deposition (ald) for High Performance Charge Trapping Flash Memory Application

Investigation of Gate Oxide Traps Effect on NAND Flash Memory by TCAD Simulation*

Annealing Effects on the Charging–Discharging Mechanism in Trilayer Al 2 O 3 /Ge/Al 2 O 3 Memory Structures

The Effect of Thermal Treatment Induced Inter-Diffusion at the Interfaces on the Charge Trapping Performance of Hfo2/Al2o3 Nanolaminate-Based Memory Devices

Impact of Band-Engineering to Performance of High- K Multilayer Based Charge Trapping Memory

Enhanced Memory Performance by Tailoring the Microstructural Evolution of (zro 2 ) 0.6 (sio 2 ) 0.4 Charge Trapping Layer in the Nanocrystallites-Based Charge Trap Flash Memory Cells

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Process Optimization of HfAlO Trapping Layer for High Performance Charge Trap Flash Memory Application

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

Impact of the Interfaces in the Charge Trap Layer on the Storage Characteristics of ZrO2/Al2O3 Nanolaminate-Based Charge Trap Flash Memory Cells

Simulation of Charge Trapping Memory with Novel Structures

Performance Improvement of Charge Trap Flash Memory by Using A Composition-Modulated High-K Trapping Layer

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Effect of Annealing on Charge Transfer in Ge Nanocrystal Based Nonvolatile Memory Structure

The Influence of Thermally Assisted Tunneling on the Performance of Charge Trapping Memory