The study of MgB2/BN/MgB2 trilayer films

hui hu,qingrong feng,yue wang,yan zhang

DOI: https://doi.org/10.1016/j.physc.2015.08.012

2015-01-01

Abstract:•We fabricate MgB2/BN/MgB2 trilayer films.•We study the films by XPS, TEM, SEM, XRD and MPMS.•Both bottom MgB2 film and the BN film are epitaxial and smooth.•Bottom MgB2 film is not deteriorated after growing the BN film.

What problem does this paper attempt to address?

Protection of BN for MgB 2 Films Against Degradation in Water

Hui Hu,Qingrong Feng,Yue Wang,Yan Zhang,Zizhao Gan

DOI: https://doi.org/10.1109/tasc.2016.2565599

IF: 1.9489

2016-01-01

IEEE Transactions on Applied Superconductivity

Abstract:MgB2 films and MgB2/BN bilayer films have been fabricated in the same reactor. The MgB2 films and the bottom MgB2 layers of the MgB2/BN bilayer films were synthesized by hybrid physical-chemical vapor deposition. Furthermore, the BN layers were synthesized by chemical vapor deposition. The degradation of MgB2 films and MgB2/BN bilayer films that are submerged into deionized water at room temperature has been studied. To clarify the protection of BN for MgB2 films against degradation in water, we analyzed the physical and magnetic properties, including the superconducting critical temperature T-c, the critical current density J(c), and the residual resistivity ratio. In addition, scanning electron microscopy and X-ray diffraction measurements were taken. The results indicate that the BN films can protect MgB2 films from degradation in water, which would be beneficial for the device application of MgB2 films.
Electron Microscopy Studies of Epitaxial MgB2 Superconducting Thin Films Grown by in Situ Reactive Evaporation

L Gu,BH Moeckly,DJ Smith

DOI: https://doi.org/10.1016/j.jcrysgro.2005.03.066

IF: 1.8

2005-01-01

Journal of Crystal Growth

Abstract:The morphology and chemistry of epitaxial MgB2 thin films grown using reactive Mg evaporation on different substrates have been characterized by transmission electron microscopy methods. For polycrystalline alumina and sapphire substrates with different surface planes, an MgO transition layer was found at the interface region. No such layer was present for films grown on MgO and 4-H SiC substrates, and none of the MgB2 films had any detectable oxygen incorporation nor MgO inclusions. High-resolution electron microscopy revealed that the growth orientation of the MgB2 thin films was closely related to the substrate orientation and the nature of the intermediary layer. Electrical measurements showed that very low resistivities (several μΩcm at 300K) and high superconducting transition temperatures (38 to 40K) could be achieved. The correlation of electrical properties with film microstructure is briefly discussed.
Clean Mgb2 Thin Films On Different Types Single-Crystal Substrate Fabricated By Hybrid Physical-Chemical Vapor Deposition

Chenggang Zhuang,Teng Tan,Yazhou Wang,Shanshan Bai,Xiaobai Ma,Huan Yang,Guohua Zhang,Yusheng He,Haihu Wen,X. X. Xi,Qingrong Feng,Zizhao Gan

DOI: https://doi.org/10.1088/0953-2048/22/2/025002

2009-01-01

Abstract:Phase pure and clean MgB2 films have been fabricated on different types of single-crystal substrate, including SiC, sapphire, MgO, LaAlO3, SrTiO3, and yttrium-stabilized ZrO2 (YSZ), via the hybrid physical-chemical vapor deposition (HPCVD) technique. Pure MgB2 films with different structural textures are obtained by selecting the substrate and its orientation, such as off-axis epitaxial MgB2 on MgO(211) or textured MgB2 on YSZ(110) substrates. Films show T-c(0) in the range 37-41 K, and residual resistivity rho(42 K) between 0.3 and 5 mu Omega cm as the substrate and film thickness are varied. The crystal structures and film morphologies are presented and discussed. Further investigations are focused on c-axis epitaxial films. Epitaxial MgB2 films with thickness about 300 nm manifest T-c(0) = 41.2 K and residual resistivity .(42 K) = 0.35 mu Omega cm on SiC(0001) while T-c(0) = 39.5 K and rho(42 K) = 0.27 mu Omega cm on c-cut sapphire, reflecting that the films are of high quality and in the 'clean limit'. Low upper critical field H-c2(parallel to ab)(0) and large anisotropy of the upper critical field gamma comparable to the results from MgB2 single crystals are also revealed. The smooth surface of the epitaxial films, with root-mean-square (RMS) roughness less than 5 nm, makes them well qualified for device applications. Microwave performance measurements are carried out using a coplanar resonator on a 300 nm thick film on sapphire substrate and no power dependence of unloaded quality factor in the output power range of -10-25 dB is found.
Growth mechanism of superconducting MgB2 films prepared by various methods

H.Y. Zhai,H.M. Christen,L. Zhang,M. Paranthaman,C. Cantoni,B.C. Sales,P.H. Fleming,D.K. Christen,D.H. Lowndes

DOI: https://doi.org/10.1557/JMR.2001.0375

2001-04-18

Abstract:The growth mechanisms of MgB2 films obtained by different methods on various substrates are compared via a detailed cross-sectional scanning electron microscopy (SEM) study. The analyzed films include (a) samples obtained by an ex-situ post-anneal at 900 degree of e-beam evaporated boron in the presence of an Mg vapor (exhibiting bulk-like Tc0 about 38.8 K), (b) samples obtained by the same ex-situ 900 degree anneal of pulsed laser deposition (PLD)-grown Mg+B precursors (exhibiting Tc0 ~ 25 K), and (c) films obtained by a low-temperature (600 - 630 degree) in-situ anneal of PLD-grown Mg+B precursors (with Tc0 about 24 K). A significant oxygen contamination was also present in films obtained from a PLD-grown precursors. On the other hand, it is clearly observed that the films obtained by the high-temperature reaction of e-beam evaporated B with Mg vapor are formed by the nucleation of independent MgB2 grains at the film surface, indicating that this approach may not be suitable to obtain smooth and (possibly) epitaxial films.

Superconductivity,Materials Science
The Study of Composition Non-Uniformity in Ternary Mgxzn1-Xo Thin Films

J Chen,WZ Shen,NB Chen,DJ Qiu,HZ Wu

DOI: https://doi.org/10.1088/0953-8984/15/30/102

2003-01-01

Abstract:We report on the growth of single cubic-phase MgZnO thin films by reactive electron beam evaporation on sapphire substrates. A detailed theoretical procedure has been employed to analyse the transmission profile for information on composition non-uniformity, in addition to the exact determination of the band gap energy. The study of composition non-uniformity has been further extended to both the typically reported hexagonal and cubic MgZnO thin films. It is found that the composition non-uniformity strongly depends on the Mg content, which can be well explained by the ZnO-MgO phase diagram.
Film Fabrication and Electronic Devices of MgB2 Superconductor

WU Ke,YU Zengqiang,ZHANG Jiedong,NIE Ruijuan,WANG Furen

DOI: https://doi.org/10.3321/j.issn:0479-8023.2007.05.005

2007-01-01

Abstract:The work on fabrication of MgB_2 superconducting thin films via E-Beam evaporation approach is reported.With the Boron film and Mg/B multilayer precursors followed by post-annealing at 900℃ and 750℃ respectively,high quality MgB_2 films have successfully been achieved.Superconducting properties of the samples have been measured and the crystal structure and surface topography have also been characterized.The results showed the performance of these two types of samples was significantly different.Some analyses have been proposed to explain this contrast.Besides,a microwave resonator has been realized based on the superconducting MgB_2 films prepared by this technique.
Microstructure and Nano-Mechanical Properties of Mn-Doped (Ba,sr)tio3//ba(zr,ti)o-3 Layered Films on Mgo

J. He,J. C. Jiang,E. I. Meletis,M. Liu,G. Collins,C. R. Ma,C. L. Chen,A. Bhalla

DOI: https://doi.org/10.1080/00150193.2014.922838

2014-01-01

Ferroelectrics

Abstract:The microstructures of two layered films consisting of 2% Mn doped (Ba,Sr)TiO3 (Mn:BST) and 2% Mn doped Ba (Zr, Ti)O3 (Mn:BZT) layers on a MgO (001) substrate deposited by pulsed laser deposition were studied using X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), high-resolution TEM and nanoindentation. The films contained four alternating layers of Mn:BST and Mn:BZT either the former or the latter as the first layer. The film deposited with Mn:BST as the first layer has a rough surface, an epitaxial continuous layer structure for the first two layers next to the interface and columnar structures for the top two layers. The first layer has a single oriented crystal structure with an in-plane lattice mismatch of ∼−5.70% and an atomically sharp interface with respect to the substrate. The second layer exhibited twin-induced domain structures. The columnar structures in the top two layers have an average width of ∼70 nm and are tightly attached to their adjacent grains without leaving any gaps or pores. The film deposited with Mn:BZT as the first layer has a relatively smooth surface and discrete needle-like nanopillars through the four layers from the interface to the top surface of the film. The first Mn:BZT layer consists of an epitaxial structure and its associated twin-coupled domains by sharing their {111} and {110} planes. The epitaxial Mn:BZT has an in-plane lattice mismatch of −3.34% with respect to MgO. The second, third and fourth layers have textured structures with {111} twin domains. The film deposited with Mn:BST as the first layer exhibited a higher hardness and modulus than the film with Mn:BZT as the first layer. The effects of the deposition sequence on the microstructure and mechanical properties are discussed.
A Study on the Components of MgB2 Thick Film Prepared Via HPCVD

Jia Zhang,Guo Jing-pu,Lu Ying,Wang Xin-feng,Chen Chin-ping,Xu Jun,Wang Xiao-nan,Zhu Meng,Feng Qing-rong

DOI: https://doi.org/10.1007/s11467-005-0011-7

2006-01-01

Frontiers of Physics in China

Abstract:Superconducting MgB2 thick film has been prepared via hybrid physical-chemical vapor deposition method on Al2O3 (0001) substrate by using B2H6 and magnesium ingot as raw materials reacted from 730 to 830°C for 40 min under 20 to 30 kPa. Its thickness is about 40 µm. The MgB2 thick film shows Tc (onset) = 39.0 K and Tc (0) = 37.2 K. X-ray diffraction pattern shows that the film grown along (101) direction has small amount of impurities of Mg and MgO. Scanning electron microscopy and energy dispersive X-ray spectroscopy indicated that these impurities existed indeed and were Mg rich. The MgO film was formed on the surface of the MgB2 thick film to further protect the sample from oxidation. We presented a new mechanism for the formation of the thick film.
Fabrication of MgB2 Films Via Multilayer Ex-Situ Annealing

Yu Zeng-Qiang,Wu Ke,Ma Xiao-Bai,Nie Rui-Juan,Wang Fu-Ren

DOI: https://doi.org/10.7498/aps.56.512

2007-01-01

Abstract:We fabricated superconducting MgB2 films with Mg/B multilayer precursors followed by ex-situ annealing. Different ways of samples' placement have been tried, and we found that turning over the samples can effectively removed the particles of Mg condensed on the film surface. The Tc of the films was about 35K with a transition width of 0.8K. The surface is quite smooth, having a roughness of 10 nm in an area of 5 μm×5 μm. When the thickness of the film is less than 1000?, the Tc is significantly reduced. With the different configurations of the multilayer precursor, the Tc of a 600?-thick film can be optimized to 32K and the Jc is 2.4×106A/cm2 at 20K.
Fabrication of MgB 2 Films Via Multilayer Ex-Situ Annealing

Yu Zeng-Qiang,Wu Ke,Ma Xiao-Bai,Nie Rui-Juan,Wang Fu-ren

DOI: https://doi.org/10.7498/aps.56.512

2007-01-01

Abstract:We fabricated superconducting MgB 2 films with Mg/B multilayer precursors followed by ex-situ annealing. Different ways of samples' placement have been tried, and we found that turning over the samples can effectively removed the particles of Mg condensed on the film surface. The T c of the films was about 35K with a transition width of 0.8K. The surface is quite smooth, having a roughness of 10 nm in an area of 5 μm×5 μm. When the thickness of the film is less than 1000?, the T c is significantly reduced. With the different configurations of the multilayer precursor, the T c of a 600?-thick film can be optimized to 32K and the J c is 2.4×10 6 A/cm 2 at 20K.
Growth and Superconductivity Characteristics of Mgb2 Thin Films

K Chen,P Ma,RJ Nie,T Yang,FX Xie,LY Liu,SZ Wang,D Dai,F Wang

DOI: https://doi.org/10.1088/0953-2048/15/12/318

2002-01-01

Abstract:We attempt to make MgB2 thin films by using a pulsed-laser-deposition (PLD) and a magnetron sputtering method. We have deposited metal magnesium and boron on various substrates under different vacuum conditions. The PLD method has been employed to fabricate layers of magnesium and boron sandwiches under room temperature and the multi-layer system was then annealed in-situ under different temperatures. We also attempted to co-deposit magnesium and boron under high vacuum (5 × 10−5 Pa) on heated substrates with PLD. We have successfully grown superconducting MgB2 thin films on an STO (100) substrate by magnetron sputtering. The onset transition temperature was 37 K and zero resistance temperature was 34 K.
Thickness Dependenceof Superconducting Properties of MgB2 THIN FILMS on Al2O3 Substrates

Xiaojing WANG,Chen ZHANG,Yan ZHANG,Qingrong FENG,Yue WANG

2016-01-01

Abstract:It has been recently recognized that MgB2 ultrathin films have good prospects in developing novel superconducting electronic devices.Investigating their superconducting properties has also important implications in exploring the phenomenon of multiband superconductivity in low-dimensions.On (0001) Al2 O3 substrates we have grown a series of MgB2 thin films with thicknesses d varying between 50 and 10 nm by employing the hybrid physical-chemical vapor deposition method and studied the thickness dependence of characteristic parameters of the films such as the superconducting transition temperature Tc,the residual resistivity ratio RRR,and the upper critical field Hc2 by measuring the temperature dependence of resistivity in zero and different applied magnetic fields.It has been observed that the Hc2 (T) exhibits a linear temperature dependence for all samples,clearly indicating the two-band superconductivity in MgB2 thin films.As d reduces,overall,the Tc and RRR of the films are shown to drop and the Hc2 (0) at 0 K rises.It has been further found that the Tc and Hc2 (0) of the films show in approximate a monotonic dependence on the RRR,with Tc decreasing and Hc2 (0) increasing as the RRR decreases,suggesting the RRR as an important factor in influencing the superconducting properties of the fabricated MgB2 ultrathin films.By analyzing the above phenomenon within the framework of two-band superconductivity,it is proposed that the interband scattering between electrons from σ band and π band in MgB2 may be intensified as the RRR of the films decreases.
MgB 2 thin films grown on graphene/Ni–Mo alloy system

kehuan linghu,qingjun song,huai zhang,qianqian yang,jibo zhang,qianhong wu,ruijuan nie,lun dai,qingrong feng,furen wang

DOI: https://doi.org/10.1016/j.physc.2015.06.001

IF: 1.534

2015-01-01

Physica C: Superconductivity and its Applications

Abstract:•Depositing MgB2 thin films on graphene/Ni–Mo alloy substrate by HPCVD is a completely new method.•The growth of MgB2 thin films in this system lays a good foundation of depositing MgB2 thick films.•We directly deposite MgB2 films on graphene(without transferring) which keeps graphene’s original morphology and properties.
Thick Polycrystalline MgB2film on Cu Substrate by Hybrid Physical–chemical Vapour Deposition

Fen Li,Tao Guo,Kaicheng Zhang,Li-ping Chen,Chinping Chen,Qing-rong Feng

DOI: https://doi.org/10.1088/0953-2048/19/11/018

2006-01-01

Abstract:Thick MgB2 films have been grown on Cu substrates by the technique of hybrid physical–chemical vapour deposition (HPCVD). The films are about 2–3 µm thick and are quite dense. The Tc (onset) is as high as 37–38 K and sharp, ∼0.7 K. X-ray diffraction indicates that the films show a highly textured polycrystalline character. The upper critical field, Hc2(0) at T = 0 K, is extrapolated as 15.3 T. The controlled growth of MgB2 film on Cu substrate provides an alternative route for the preparation of MgB2 tape materials.
MgB2 Superconducting Films Fabricated on Copper Substrate by Hybrid Physical-Chemical Vapor Deposition

Fen Li,Tao Guo,Kaicheng Zhang,Chinping Chen,Qingrong Feng

DOI: https://doi.org/10.4028/www.scientific.net/msf.546-549.1919

2007-01-01

Materials Science Forum

Abstract:The thick MgB2 films have been successfully grown on the Cu substrate by the technique of hybrid physical-chemical vapor deposition (HPCVD). The films are about 2 ~ 3 μm and quite dense. They possess the Tc (onset), as high as 37-38 K, and sharp transition ~ 0.8 K. X-ray diffraction (XRD) indicates their polycrystalline character. The upper critical field at T=0K, HC2(0), is extrapolated as 15.3T. The controlled growth of MgB2 film on Cu substrate opens a new route in the preparation of MgB2 tape materials.
Structures And Tunability Of Ba0.5sr0.5tio3/Bi1.5zn1.0nb1.5o7 Multilayer Thin Films Grown On Pt/Al2o3 Substrates

Xin Yan,Wei Ren,Peng Shi,Xiaoqing Wu,Xiaofeng Chen,Xi Yao

DOI: https://doi.org/10.1080/00150190902892980

2009-01-01

Ferroelectrics

Abstract:Ba0.5Sr0.5TiO3 (BST)/Bi1.5Zn1.0Nb1.5O7 (BZN) multilayer thin films have been prepared on Pt/Al2O3 substrates by a sol-gel method. The multilayer thin films were deposited alternatively by spin coating technique and crystallized by rapid thermal annealing. The structures and morphologies of BST/BZN multilayer thin films were analyzed by XRD and FESEM. The XRD results showed that the perovskite BST phase and the cubic pyrochlore BZN phase can be observed respectively in the multilayer thin films annealed at 700-800 degrees C. The morphology of BST/BZN multilayer films shows that the films are crack-free and have distinct interfaces. The BST/BZN multilayer thin films annealed at 750 degrees C exhibit a moderate dielectric constant around 69, a low loss tangent of 0.007, and a relative tunability of 21% at bias field of 450 kV/cm at 10kHz.
X-Ray Study Of Inplane Epitaxy Of Gdba2cu3o7-Y Thin-Film On Mgo(001)

Shi Lei,Li Xiao-Guang,Jia Junbo,Zhou Guien,R.L. Wang,C.A. Wang,H.R. Yi,H.C. Li,Zhang Yuheng

DOI: https://doi.org/10.1016/0921-4534(93)90118-A

1993-01-01

Abstract:GdBa2Cu3O7-y superconducting thin film with zero resistance transition temperature T(c) = 87.5 K, grown in situ on MgO (001 ) substrate by DC magnetron sputtering, was studied by X-ray diffraction experiments. The relation between the a- and b-axes of the GdBa2Cu3O7-y thin film and the in-plane lattice vectors of MgO substrate has been directly obtained by X-ray transmission beta scan. It is found that there are two sorts of twinnings in the film, which are 45-degrees and 90-degrees twins, respectively. The relationships between GdBa2Cu3O7-y thin film and Mg substrate are GdBa2Cu3O7-y (001)\\MgO(001) and GdBa2Cu3O7-y [010]\\MgO [110BAR], or GdBa2Cu3O7-y [100]\\Mg0[100]. Both of them may cause highly misfit dislocations in the film, which may enhance the pinning effect. The possible different ways of matching GdBa2Cu3O7-y films on MgO have been discussed.
Intrinsic Flux Pinning Mechanisms in Different Thickness MgB2 Films

C. Yang,Z. M. Ni,X. Guo,H. Hu,Y. Wang,Y. Zhang,Q. R. Feng,Z. Z. Gan

DOI: https://doi.org/10.1063/1.4979075

IF: 1.697

2017-01-01

AIP Advances

Abstract:MgB2 films in four thickness (60 nm, 200nm, 600nm and 1μm) have been fabricated by hybrid physical–chemical vapor deposition technique (HPCVD). By measuring the magnetization hysteresis loops and the resistivity, we have obtained the transport and magnetic properties of the four films. After that, the pinning mechanisms in them were discussed. Comparing the pinning behaviors in these ultrathin films, thin films and thick films, it was found that there exist different pinning types in MgB2 films of different thickness. In combination with the study of the surface morphology, cross-section and XRD results, we concluded that MgB2 films had different growth modes in different growth stages. For thin films, films grew along c axis, and grain boundaries acted as surface pinning. While for thick films, films grew along c axis at first, and then changed to a-b axis growth. As a result, the a-b axis grains acted as strong volume pinning.
The study of microstructure and growth mode of the multilayer films in BaTiO_3/SrTiO_3

HE Jun-ming,ZHOU Yi,DING Ying,LI Jun-chi,CHEN Jiang-hua,LIU Ming,MA Chun-rui,CHEN Chong-lin

2012-01-01

Abstract:BaTiO3(BTO)/SrTiO3(STO) superlattice thin films were grown on(001) MgO substrates using pulsed laser deposition.The microstructure and interfacial defects of the film were studied by means of high resolution transmission electron microscopy(HRTEM) and High Angle Annular Dark Field STEM(HAADF-STEM).Based on the observation results,a growth mechanism of the film was proposed.It is shown that(Ⅰ) periodical misfit dislocations with a Burgers vector of a 2<110> exist near the interface;(Ⅱ) a very thin transitional interfacial layer appears at the film/substrate interface,in which local domains seem existed;(Ⅲ) two types of stacking faults exist in the film:Ti-rich and Ba-rich,and both of them have a Burgers vector of a 2<110>;(Ⅳ) during the growth,ununiform internal stresses resulted from relaxation make the BTO/STO superlattice thin film to form column structures.
MgB2 thick film grown on Stainless steel substrate with ductility

Qing-rong Feng,Chinping Chen,Ying Lu,Zhang Zia,Jing-pu Guo,Xiao-nan Wang,Meng Zhu,Jun Xu,Yong-zhong Wang

DOI: https://doi.org/10.1117/12.607297

2004-08-27

Abstract:MgB2 thick film was synthesized on the stainless steel substrate by the technique of hybrid physical-chemical vapor deposition (HPCVD), using Mg ingot and B2H6 as the raw materials. The film thickness is about 10 microns. The scanning electron microscope (SEM) images reveal that it is consisting of highly dense MgB2 crystals with the size ranging from 0.2 to 3 microns. The superconducting transition occurs at 38 K (Tc, onset) and ends at 27 K (Tc, zero), giving the transition width of 11 K. The fabricated film exhibits high ductility and remains attached to the substrate after it was bent to a curvature of about 200 microns.

Superconductivity

The study of MgB2/BN/MgB2 trilayer films

Protection of BN for MgB 2 Films Against Degradation in Water

Electron Microscopy Studies of Epitaxial MgB2 Superconducting Thin Films Grown by in Situ Reactive Evaporation

Clean Mgb2 Thin Films On Different Types Single-Crystal Substrate Fabricated By Hybrid Physical-Chemical Vapor Deposition

Growth mechanism of superconducting MgB2 films prepared by various methods

The Study of Composition Non-Uniformity in Ternary Mgxzn1-Xo Thin Films

Film Fabrication and Electronic Devices of MgB2 Superconductor

Microstructure and Nano-Mechanical Properties of Mn-Doped (Ba,sr)tio3//ba(zr,ti)o-3 Layered Films on Mgo

A Study on the Components of MgB2 Thick Film Prepared Via HPCVD

Fabrication of MgB2 Films Via Multilayer Ex-Situ Annealing

Fabrication of MgB 2 Films Via Multilayer Ex-Situ Annealing

Growth and Superconductivity Characteristics of Mgb2 Thin Films

Thickness Dependenceof Superconducting Properties of MgB2 THIN FILMS on Al2O3 Substrates

MgB 2 thin films grown on graphene/Ni–Mo alloy system

Thick Polycrystalline MgB2film on Cu Substrate by Hybrid Physical–chemical Vapour Deposition

MgB2 Superconducting Films Fabricated on Copper Substrate by Hybrid Physical-Chemical Vapor Deposition

Structures And Tunability Of Ba0.5sr0.5tio3/Bi1.5zn1.0nb1.5o7 Multilayer Thin Films Grown On Pt/Al2o3 Substrates

X-Ray Study Of Inplane Epitaxy Of Gdba2cu3o7-Y Thin-Film On Mgo(001)

Intrinsic Flux Pinning Mechanisms in Different Thickness MgB2 Films

The study of microstructure and growth mode of the multilayer films in BaTiO_3/SrTiO_3

MgB2 thick film grown on Stainless steel substrate with ductility