Room Temperature H2 Detection Based on Pd/SiNWs/p-Si Schottky Diode Structure

L. S. Zhu,J. Zhang,X. W. Xu,Y. Z. Yu,X. Wu,T. Yang,X. H. Wang
DOI: https://doi.org/10.1016/j.snb.2015.12.080
IF: 9.221
2016-01-01
Sensors and Actuators B Chemical
Abstract:In this paper, the Schottky diode sensor composed of silicon nanowires (SiNWs) coated with palladium layers was used for room temperature H-2 detection. Pd films were deposited on silicon nanowire via electroless plating. The structural and morphological properties of the Pd/SiNWs were analyzed firstly. The current-voltage (I-V) curves of Pd/SiNWs Schottky diode structure were measured. Variations of the electrical current in the presence of H-2 at room temperature revealed that the diode sensors can sense H-2 in a wide range of concentration of 300-3000 ppm. This novel sensor has great potential for the detection of H-2 at room temperature. (C) 2016 Elsevier B.V. All rights reserved.
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