Flexible Pd-WS2/Si Heterojunction Sensors for Highly Sensitive Detection of Hydrogen at Room Temperature

Lanzhong Hao,Hui Liu,Hanyang Xu,Shichang Dong,Yongjun Du,Yupeng Wu,Huizhong Zeng,Jun Zhu,Yunjie Liu
DOI: https://doi.org/10.1016/j.snb.2018.12.062
2019-01-01
Abstract:Flexible sensor devices were fabricated through the deposition of layered tungsten disulfide (WS2) thin films on ultrathin Si by using magnetron sputtering technique and a 3-nm-thickness Pd layer was covered on the device surface to perform the room-temperature detection of hydrogen. The flexible Pd-WS2/Si heterojunctions exhibited excellent sensitive characteristics to hydrogen in a large range of 0.1%-4.0%. By tuning the layer number (nL) of the WS2 films, a high response up to 19.8, fast response and recovery speeds were achieved when n = 5, respectively. The performance was much better than the values for other reported flexible hydrogen sensors based on single 2D nanosheets. The sensing characteristics were further evaluated under bending conditions, revealing their significantly high flexibility, durability, stability as well as good selectivity. This work paves the way to develop high-performance flexible Pd-WS2/Si sensors for hydrogen detection at room temperature.
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