Pd-decorated 2D SnSe ultrathin film on SiO2/Si for room-temperature hydrogen detection with ultrahigh response

Hanyang Xu,Yunjie Liu,Hui Liu,Shichang Dong,Yupeng Wu,Zegao Wang,Yimeng Wang,Mingsa Wu,Zhide Han,Lanzhong Hao
DOI: https://doi.org/10.1016/j.jallcom.2020.156844
IF: 6.2
2021-01-01
Journal of Alloys and Compounds
Abstract:<p>Developing hydrogen sensors with high integration and high performance is still a great challenge. Herein, two dimensional (2D) layered tin monoselenide (SnSe) ultrathin films are deposited on SiO<sub>2</sub>-buffered silicon substrates via a scalable sputtering method. Then, a 15-nm-thickness Pd layer is decorated on the SnSe film. Due to the anisotropic van der Waals force from 2D SnSe surface, large quantities of nanoscaled Pd grains are formed, largely enhancing the active area when exposed in gas molecules. Benefiting from the unique surficial structure and abrupt interfacial properties with a large built-in electrical field, the fabricated Pd-decorated SnSe/SiO<sub>2</sub>/Si heterojunction exhibits excellent room-temperature H<sub>2</sub> sensing performance with an ultrahigh response of ∼3225, 2–3 orders of magnitude higher than other 2D-based sensors. The sensor device also achieves fast response/recovery speed (73.1/23.7 s), ultralow detecting limit (∼0.91 ppb), as well as good selectivity. These findings promise the great potential of Pd-decorated SnSe/SiO<sub>2</sub>/Si heterostructures for high-performance sensor applications.</p>
materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
What problem does this paper attempt to address?
This paper attempts to address the issue of developing highly integrated, high-performance hydrogen sensors at room temperature. Traditional commercial hydrogen sensors, although performing well, suffer from poor selectivity and high operating temperatures, leading to high energy consumption and safety hazards. Sensors based on palladium nanostructures exhibit good selective response to hydrogen at room temperature, but they are prone to mechanical degradation during hydrogen adsorption and desorption, resulting in unstable device performance. Therefore, synthesizing new sensitive materials to manufacture high-performance hydrogen sensors at room temperature remains an urgent problem to be solved. In this paper, a Pd-SnSe/SiO2/Si heterojunction was constructed by depositing a 2D tin selenide (SnSe) ultrathin film on a silicon substrate buffered with silicon dioxide, and decorating its surface with a 15-nanometer thick palladium (Pd) layer. This heterojunction exhibits excellent hydrogen sensing performance at room temperature, including an ultra-high response value (approximately 3225), fast response/recovery speed (73.1/23.7 seconds), extremely low detection limit (approximately 0.91 ppb), and good selectivity. These findings indicate that the Pd-SnSe/SiO2/Si heterojunction has great potential in high-performance sensor applications.