Hydrogen gas sensing properties of Pd/a-C:Pd/SiO2/Si structure at room temperature

Yonggang Du,Qingzhong Xue,Zhongyang Zhang,Fujun Xia,Jianpeng Li,Zhide Han
DOI: https://doi.org/10.1016/j.snb.2013.06.067
2013-01-01
Abstract:Hydrogen gas (H-2) sensor based on palladium/palladium doped amorphous carbon film/SiO2/Si (Pd/a-C:Pd/SiO2/Si) structure is fabricated. It is found that H-2 molecules have dramatic effect on the current-voltage (I-V) characteristic of the novel Pd/a-C:Pd/SiO2/Si structure at room temperature. Upon exposure to 1.6% H-2 at a reverse bias voltage of -0.5 V. the currents of the Pd/a-C:Pd/SiO2/p-Si and Pd/a-C:Pd/SiO2/n-Si structures change about 840% and 13,100%, respectively. The results show that the Pd/a-C:Pd/SiO2/Si structure has high H-2 response. The sensing mechanism of the Pd/a-C:Pd/SiO2/Si structure has also been discussed. (C) 2013 Elsevier B.V. All rights reserved.
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