Individual Bi2s3 Nanowire-Based Room-Temperature H-2 Sensor

K. Yao,W. W. Gong,Y. F. Hu,X. L. Liang,Q. Chen,L. -M. Peng
DOI: https://doi.org/10.1021/jp8022293
2008-01-01
Abstract:Single Bi2S3 nanowire devices were fabricated using the focused ion beam technique to deposit Pt electrodes. Repeatable and reliable ohmic contacts were obtained. The devices exhibit outstanding H-2 sensing performance that can detect H2 (in N-2) at room temperature with a sensitivity of 22% at 10 ppm (corresponds to 4.0 x 10(-7) mol/L). Decorating Pd nanoparticles on the surface of the nanowire does not improve the sensing performance, contrary to most of the existing nanowire (or nanotube) H-2 sensors. The sensing mechanism of Bi2S3 nanowire devices is found to be different from that of other sensors based on nanowires or nanotubes. Experiments on different H-2 concentrations and gas pressures suggest that the sensing response is determined mainly by the amount of H-2 molecules instead of the proportion of H-2 in the mixed gas.
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