Switching Effect of p-CuO Nanotube/n-In 2 S 3 Nanosheet Heterostructures for High-Performance Room-Temperature H 2 S Sensing

Wenjian Zhang,Xukun Wang,Ziye Fan,Juan Li,Guo Liu,Xueliang Lv,Bingsheng Li,Jinyuan Zhou,Erqing Xie,Zhenxing Zhang
DOI: https://doi.org/10.1021/acsami.1c15564
2021-10-27
Abstract:High operating temperature and low response restrict the application of H<sub>2</sub>S sensors. Due to the strong chemical affinity of CuO to H<sub>2</sub>S and the large band gap and high stability of β-In<sub>2</sub>S<sub>3</sub>, CuO nanotube/In<sub>2</sub>S<sub>3</sub> nanosheet p/n heterostructures have been delicately designed for binder-free gas sensors by a facile method consisting of sputtering, chemical etching, and annealing. A switching effect of H<sub>2</sub>S concentration on the response of CuO/In<sub>2</sub>S<sub>3</sub> gas sensors has been observed. When exposed to low-concentration H<sub>2</sub>S (1-10 ppm), the response is less than 0.10 and dominated by the surface-type adsorption-desorption process between CuO and H<sub>2</sub>S. When exposed to high-concentration H<sub>2</sub>S, the sensor exhibits a superior response of 3511 toward 50 ppm H<sub>2</sub>S, considerable selectivity, and long-term stability at room temperature. This dramatically enhanced response can be explained by the transformed junction from the CuO/In<sub>2</sub>S<sub>3</sub> heterojunction to the CuS/In<sub>2</sub>S<sub>3</sub> Schottky junction. These results suggest that the binder-free ceramic tube-type CuO/In<sub>2</sub>S<sub>3</sub> gas sensor with considerable performance will have promising potential for H<sub>2</sub>S gas detection. Moreover, this method provides an effective strategy to fabricate other binder-free gas sensors.
materials science, multidisciplinary,nanoscience & nanotechnology
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