Abstract:Herein, we report a reproducible improvement of the thermoelectric performance in BiSbTe alloy via kinetically and dynamically regulating excitation behavior in the intrinsic excitation regime. Doping with Pb increases the carrier concentration to the optimal value, kinetically pushing the onset temperature for the intrinsic excitation from 350 K for Bi0.46Sb1.54Te3 sample to 450 K for Pb0.01(Bi0.46Sb1.54)0.995Te3 sample. Moreover, the refined grains, nanostructures as well as dense dislocations induced by the melt-spinning process not only lower the lattice thermal conductivity via intensifying the interfacial phonon scattering but also selectively block the migration of minority carrier, modifying the dynamic process of the charge carrier and resulting in a smaller ratio of ( μ e / μ h ). This improves the power factor in the measured temperature range and suppresses the bipolar thermal conductivity in the intrinsic excitation regime. Thus, a maximum power factor of 4.44 mW m−1 K−2 and the lowest thermal conductivity of 1.06 W m−1 K−1 are attained for the sample with refined grains and nanostructures. All these contribute to the highest ZT value of 1.31 at 380 K and the highest average ZT value of 1.17 from 300 K to 500 K for Pb0.002(Bi0.46Sb1.54)0.999Te3 sample. This improved thermoelectric property was further verified in a thermoelectric module with the conversion efficiency of 4.38 % under a temperature gradient of 175 K, which is 20 % higher than that of the commercial ZM-based module under the same temperature gradient.

Electronic Structures and Thermoelectric Properties of La or Ce-Doped Bi2te3 Alloys from First Principles Calculations

First-principles Calculations and High Thermoelectric Performance of La–Nb Doped SrTiO3ceramics

High-temperature thermoelectric properties with Th$_{3-x}$Te$_4$

Effect of La3+, Ag+ and Bi3+ doping on thermoelectric properties of SrTiO3: First-principles investigation

Effect of Bi3+ Doping on the Electronic Structure and Thermoelectric Properties of (Sr0.889-xLa0.111Bix)TiO2.963: First-Principles Calculations

Influence of Ag2te Doping on the Thermoelectric Properties of P-Type Bi0.5sb1.5te3 Bulk Alloys

Thermoelectric power factor of Bi-Sb-Te and Bi-Te-Se alloys and doping strategy: First-principles study

Achieving High-Performance Ge<sub>0.92</sub>Bi<sub>0.08</sub>Te Thermoelectrics via LaB<sub>6</sub>-Alloying-Induced Band Engineering and Multi-Scale Structure Manipulation

Electronic Structure and Thermoelectric Properties of Bi2Te3 Crystals and Graphene-Doped Bi2Te3

Influence of Ag_2Te Doping on the Thermoelectric Properties of p-type Bi_(0.5)Sb_(1.5)Te_3 Bulk Alloys

Enhanced Thermoelectric Performance Of (Sb0.75bi0.25)(2)Te-3 Compound From First-Principles Calculations

Flower-like nanostructure and thermoelectric properties of hydrothermally synthesized La-containing Bi2Te3 based alloys

Thermoelectric Properties of Ag Doped Pseudo-binary Alloys (PbTe)1-x(SnTe)x

Mn15Bi34Te51 and La15Bi34Te51 thermoelectric materials by mechanical alloying

Thermoelectric Properties of Pb-doped Bismuth Telluride Thin Films Deposited by Magnetron Sputtering

Regulation of exciton for high thermoelectric performance in (Bi, Sb)2Te3 alloys via doping with Pb and multi-scale microstructure

Effects of La doping induced carrier concentration regulation and band structure modification on thermoelectric properties of PbSe

Thermoelectric Properties of Quaternary Ag-Bi-Sb-Te Alloys

High performance of Mg3Bi1.5Sb0.5 based materials for power generation: Revealing the counter-intuitive effect of tuning Bi content on the thermoelectric properties

Achieving High‐Performance Ge 0.92 Bi 0.08 Te Thermoelectrics via LaB 6 ‐Alloying‐Induced Band Engineering and Multi‐Scale Structure Manipulation

Theoretical Maximum Thermoelectric Performance of Cu-doped and Electric Current Pulse-treated Bi-Sb-Te Alloys