Abstract:By applying a novel active modulation layer of indium tin oxide/tin zinc oxide (ITO/TZO), we have successfully fabricated high-performance bottom-gate-type dual-active-layer thin-film transistors (TFTs) on a glass substrate at a low temperature by a simple process. The as-fabricated dual-active-layer ITO/TZO TFTs exhibited excellent electrical properties compared with single-active-layer TZO TFTs. We found that the dual-layer ITO/TZO TFT with an optimized stack structure of ITO (5 nm)/TZO (45 nm) as the channel layer exhibits excellent properties, namely, a high saturation mobility of 204cm(2)V(-1)s(-1), a steep subthreshold slope of 219mV/dec, a low threshold voltage of 0.8V, and a high on-off current ratio of 4.3 x 10(7). A physical mechanism for the electrical improvement is also deduced. Owing to its advantages, namely, a low processing temperature, a high electrical performance, a simple process, and a low cost, this novel active modulation layer is highly promising for the manufacture of oxide semiconductor TFT and transparent displays. (C) 2015 The Japan Society of Applied Physics

P‐16: The Research of Dual‐Layer Channel ITO/MZO Thin Film Transistors Fabricated on Glass at Low Temperature

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P‐15: High‐Performance Fully Transparent Hafnium‐Doped Zinc Oxide TFTs Fabricated at Low Temperature

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Paper No P20: Effects of the Channel Thickness on Characteristics of Ga‐Doped Zinc Oxide Thin‐Film Transistors Fabricated on Glass