Microwave Dielectric Properties of Sol-Gel Processed Bi4si3o12 Ceramics and Single Crystal

Huidong Xie,Fei Li,Haihong Xi,Di Zhou
DOI: https://doi.org/10.1080/0371750x.2015.1011288
2015-01-01
Transactions of the Indian Ceramic Society
Abstract:Microwave dielectric ceramics Bi4Si3O12 was made from powders prepared via sol-gel method as a potential candidate of low temperature co-fired ceramics in microwave applications. The microwave dielectric properties of sol-gel processed Bi4Si3O12 ceramics were compared with that of single crystal. The sintering temperature of the ceramics ranged from 920 degrees to 1010 degrees C. The best microwave dielectric properties were obtained when the ceramics was sintered at 980 degrees C for 8 h with a permittivity of approximate to 8.8, a Qxf value of approximate to 41,898 GHz (at 11.5 GHz) and a temperature coefficient value of -72 ppm/degrees C. The permittivity, Qxf value, and temperature coefficient value of Bi4Si3O12 single crystal were approximate to 15.9, 45,326 GHz (at 7.0 GHz) and -92 ppm/degrees C, respectively.
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