Abstract:Molybdenum ditelluride (MoTe2) has attracted ever-growing attention in recent years due to its novel characteristics in spintronics and phase-engineering, and an efficient and convenient method to achieve large-area high-quality film is an essential step toward electronic applications. However, the growth of large-area monolayer MoTe2 is challenging. Here, for the first time, we achieve the growth of a centimeter-sized monoclinic MoTe2 monolayer and manifest the mechanism of immobilized precursor particle driven growth. Microscopic characterizations reveal an obvious trend of immobilized precursor particles being consumed by the monolayer and continuing to provide a source for the growth of the monolayer. Time-of-flight secondary ion mass spectrometry verifies the attachment of hydroxide ions on the surface of the MoTe2 monolayer, thereby realizing the inhibition of crystal growth along the [001] zone axis and the continuous growth of the MoTe2 monolayer. The first-principles DFT calculations prove the mechanism of immobilized precursor particles and the absorption of hydroxide ions on the MoTe2 monolayer. The as-grown MoTe2 monolayer exhibits a surface roughness of 0.19 nm and average conductivity of 1.5 × 10-5 S/m, which prove the smoothness and uniformity of the MoTe2 monolayer. Temperature-dependent electrical measurements together with the transfer characteristic curves further demonstrate the typical semimetallic properties of monoclinic MoTe2. Our research elaborates the microscopic process of immobilized precursor particles to grow large-area MoTe2 monolayer and provides a new thinking about the growth of many other two-dimensional materials.

Top-seeded Solution Crystal Growth of Noncentrosymmetric and Polar Zn2TeMoO7 (ZTM)

Crystal Growth and Optical Properties of A Noncentrosymmetric Molybdenum Tellurite, Na2te3mo3o16

Top-Seeded Solution Growth And Properties Of High T-C Pb(In1/2nb1/2)O-3-Pb(Zn1/3nb2/3)O-3-Pbtio3 Single Crystals

Growth and characterization of ZnTe single crystal via a novel Te flux vertical Bridgman method

Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear Spectrometers

Top‐seeded Growth, Optical Properties and Theoretical Studies of Noncentrosymmetric Te2V2O9

Growth and Characterization of <110> Oriented ZnTe Single Crystal

Optimized growth and anisotropic properties of Li 2 ZrTeO 6 nonlinear optical crystals

Study of Zn1−xQxTe(Q=Mn, V) Crystals Grown from Te-Rich Solution As Terahertz Emitters and Sensors

Controlling Te inclusion during direct mixed solution growth of large size CdZnTe crystal

Improvement of the Thz Response of Zn1-Xmnxte Bulk Crystals Grown by A Temperature Gradient Solution Method

Organic solution method for crystal growth of tin chalcogenides with special morphologies

Growth of ZnTe crystal via directional solidification method and study of its mechanical properties

The Growth of Ultralong ZnTe Micro/Nanostructures: the Influence of Polarity and Twin Direction on the Morphogenesis of Nanobelts and Nanosheets

Microstructure, Growth Mechanism and Anisotropic Resistivity of Quasi-One-dimensional ZrTe5 Crystal

Immobilized Precursor Particle Driven Growth of Centimeter-Sized MoTe2 Monolayer

Comparison of ZnTe Bulk Crystals Grown by the Temperature Gradient Solvent Method Using Elemental and Compound Materials

Ultrahigh Yield and Large-Scale Fast Growth of Large-Size High-Quality Van Der Waals Transition-Metal Telluride Single Crystals

Seeded Growth Of High-Quality Transition Metal Dichalcogenide Single Crystals Via Chemical Vapor Transport

Synthesis and Growth of Nonlinear Infrared Crystal Material CdSe Via Seeded Oriented Temperature Gradient Solution Zoning Method

Single crystal growth and characterization of topological semimetal ZrSnTe