Femtosecond-laser-assisted high-aspect-ratio nanolithography in lithium niobate
Tianxin Wang,Xiaoyan Cheng,Xuan Li,Jianan Ma,Shuo Yan,Xueli Hu,Kai Qi,Weiwen Fan,Manman Liu,Xiaoyi Xu,Xiaomei Lu,Xiaoshun Jiang,Yong Zhang
DOI: https://doi.org/10.1039/d3nr03750a
IF: 6.7
2023-09-07
Nanoscale
Abstract:We report the successful fabrication of high-aspect-ratio lithium niobate (LN) nanostructures by using femtosecond-laser-assisted chemical etching. In this technique, a 1 kHz femtosecond laser is first used to induce local modifications inside the LN crystal. Then, selective chemical wet etching is conducted using a buffered oxide etch (BOE) solution. The etching rate in the laser-modified area reaches 2 μm/h, which is enhanced by a factor of ~660 in comparison to the unmodified area. Such high selectivity in chemical etching helps realize high-performance maskless nanolithography in lithium niobate. In the experiment, we have fabricated high-quality LN nanohole arrays. The nanohole size reaches ~100 nm and its aspect ratio is above 40:1. The minimal period of the LN hole array is 300 nm. Our work paves a way to fabricate LN nano-integrated devices for advanced optic and electronic applications.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry