Abstract:High-performance thin-film transistors (TFTs) with amorphous indium gallium zinc oxide (IGZO)/Ga2O3 heterojunction and the reference TFTs with single-layer IGZO, Ga2O3, and stacked IGZO/Al2O3 layers are fabricated by sputtering. The as-deposited IGZO/Ga2O3 TFT shows high ON current of $0.97\,\,\mu \text{A}\cdot \mu \text{m}^{-{1}}$ at a drain voltage of 1 V, which is 7 orders of magnitude higher than that of the reference single layer TFTs and high mobility of 22.2 cm ${}^{{2}}{\cdot }\text{V}^{-{1}}{\cdot }\text{s}^{-{1}}$ , which is twice of that of the reference as-deposited IGZO/Al2O3 TFT (11.5 cm ${}^{{2}}{\cdot }\text{V}^{-{1}}{\cdot }\text{s}^{-{1}}$ ). Combining such superior conductivity of the IGZO/Ga2O3 TFT with the energy-level alignment, it indicates quasi-two-dimensional electron gas existed at the interface originated from the electrons confined in the potential well of IGZO. After annealing in air atmosphere, the IGZO/Ga2O3 TFT shows an effective gate modulation with high current ON/ OFF ratio of 1.2 $\times \,\,10^{{7}}$ and high mobility of 15.8 cm ${}^{{2}}{\cdot }\text{V}^{-{1}}\cdot \text{s}^{-{1}}$ comparing with that of the reference annealed IGZO/Al2O3 TFT (11.5 cm ${}^{{2}}{\cdot }\text{V}^{-{1}}{\cdot }\text{s}^{-{1}}$ ). In addition, the bias stability of the annealed IGZO/Ga2O3 TFT is enhanced due to the interface passivation. Our results indicate that amorphous IGZO/Ga2O3 heterostructure is an effective way to achieve high-mobility and stable TFTs, which have great potential in low-cost, large-area, and flexible high-definition displays.

Amorphous In-Ga-Zn-O Thin-Film Transistors Fabricated by Microcontact Printing

Large Area, Ultrathin, and Transparent InGaZnO Films from Printing of Liquid Ga–In–Zn Alloys for Thin Film Transistors

Amorphous IZO-based transparent thin film transistors

All-Sputtered, Flexible, Bottom-Gate Igzo/Al2o3 Bi-Layer Thin Film Transistors on Pen Fabricated by A Fully Room Temperature Process

High Resolution Inkjet Printed Oxide Thin Film Transistors with Self-Aligned Fine Channel Bank Structure.

Amorphous InGaZnO Thin Film Transistor Fabricated with Printed Silver Salt Ink Source/Drain Electrodes

Fabrication of Flexible Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors by a Chemical Vapor Deposition-Free Process on Polyethylene Napthalate

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Significant Performance Enhancement of Very Thin InGaZnO Thin-Film Transistors by a Self-Assembled Monolayer Treatment

Fabrication And Characterization Of A-Igzo Thin Film Transistors On Smooth Printed Polyimide

P‐1.8: High Performance Amorphous IZO/IGZO Bilayer Thin Film Transistors for Ink‐jet Printed AMOLED Displays

Fabrication of an a-IGZO Thin Film Transistor Using Selective Deposition of Cobalt by the Self-Assembly Monolayer (SAM) Process

High-Performance Thin-Film Transistors with Sputtered IGZO/Ga₂O₃ Heterojunction

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors.

Reduced Contact Resistance of A-Igzo Thin Film Transistors with Inkjet-Printed Silver Electrodes

Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper.

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes

Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source/Drain