Abstract:Research interest in thin-film transistor (TFT)-based flexible electronics for next-generation foldable and rollable displays is increasing, centering on flexible plastic substrates such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyimide (PI). For flexible electronics using plastic substrates, it is important to select suitable semiconductor materials that can be deposited at low substrate temperature. Metal oxide (MO) semiconductors such as indium-gallium-zinc oxide (IGZO), zinc oxide (ZnO) are attracting attention as suitable candidates for plastic substrate electronics because of their higher mobility and optical transmittance than hydrogenated amorphous silicon (a-Si:H). In addition, since it can be processed at a lower temperature than low-temperature polysilicon (LTPS), it can be easily applied to flexible plastic substrates. One of the greatest advantages of MO is that it can be easily fabricated by conventional semiconductor processing methods such as sputtering, atomic laser deposition, and solution processes. Among them, solution-processed deposition method is particularly advantageous in terms of manufacturing efficiency because it does not require a separate vacuum system, and can efficiently utilize raw materials, so the fabrication cost is inexpensive. In particular, spray pyrolysis can guarantee environmental stability, high mobility, and large area production than other solution processes. In this work, we developed the high-performance, flexible a-IGZO/Al 2 O 3 TFTs using spray pyrolysis fabricated on the flexible PI substrate. In a previous study, we developed a method to reduce curling and electrostatic discharge (ESD) damage to PI substrates by using a mixture of carbon nanotubes (CNTs) and graphene oxide (GO) between carrier glass and PI substrate. Therefore, it was possible to mechanically detach the TFTs on PI substrate and handle them easily even after detachment. The spray-pyrolyzed Al 2 O 3 film is one of the high-k dielectric materials, which can lower the operating voltage, so the low-power consumption of the TFT backplane can be realized. The flexible spray-pyrolyzed a-IGZO/Al 2 O 3 TFT exhibits the field-effect mobility (μ FE ) of 9.75 cm 2 V −1 s −1 , threshold voltage (V TH ) of −0.8 V, subthreshold swing (SS) of 0.29 V dec −1 , and on/off current ratio of 6.2 × 10 7 . Even without TFT passivation layer, it shows environmental stability. The TFTs show robust electrical performance even under tensile strain with a bending radius of 1 mm. In addition, it showed stable electrical characteristics even in the repeated bending test of 30,000 cycles under compressive strain with a bending radius of 1 mm. This is due to fewer defects resulting from the smooth interface of the a-IGZO film and the Al 2 O 3 film deposited through spray pyrolysis. Therefore, spray-pyrolyzed a-IGZO/Al 2 O 3 TFT fabricated on PI substrate is a promising candidate for next-generation foldable display application. Figure 1

Fabrication of Flexible Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors by a Chemical Vapor Deposition-Free Process on Polyethylene Napthalate

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

Room-temperature fabrication of flexible oxide TFTs by co-sputtering of IGZO and ITO

High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

Flexible Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistor with Aluminum Oxide Gate Insulator on Polyimide Substrate By Spray Pyrolysis for Foldable Display

Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

DC and AC Performance of InGaZnO Thin-Film Transistors on Flexible PEEK Substrate

All-sputtered, flexible, bottom-gate IGZO/Al 2 O 3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

High Reliability Of Igzo Tfts Using Low-Temperature Fabricated Organic Passivation Layers

Flexible Low-Voltage IGZO Thin-Film Transistors with Polymer Electret Gate Dielectrics on Paper Substrates

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Flexible Thin-Film Transistors with Vertical In-Ga-Zn-O Channel Using Atomic-Layer Deposition on Poly(Ethylene Naphthalate) Substrate

Flexible Transparent Junctionless TFTs with Oxygen-Tuned Indium-Zinc-Oxide Channels

Bendable metal oxide thin-film transistors and circuits for analog electronics applications

Amorphous IZO-based transparent thin film transistors

Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper.