Reduced Contact Resistance of A-Igzo Thin Film Transistors with Inkjet-Printed Silver Electrodes

Jianqiu Chen,Honglong Ning,Zhiqiang Fang,Ruiqiang Tao,Caigui Yang,Yicong Zhou,Rihui Yao,Miao Xu,Lei Wang,Junbiao Peng

DOI: https://doi.org/10.1088/1361-6463/aab4b9

2018-01-01

Abstract:In this study, high performance amorphous In–Ga–Zn–O (a-IGZO) TFTs were successfully fabricated with inkjet-printed silver source-drain electrodes. The results showed that increased channel thickness has an improving trend in the properties of TFTs due to the decreased contact resistance. Compared with sputtered silver TFTs, devices with printed silver electrodes were more sensitive to the thickness of active layer. Furthermore, the devices with optimized active layer showed high performances with a maximum saturation mobility of 8.73 cm2 · V−1 · S−1 and an average saturation mobility of 6.97 cm2 · V−1 · S−1, Ion/Ioff ratio more than 107 and subthreshold swing of 0.28 V/decade, which were comparable with the analogous devices with sputtered electrodes.