Inkjet Printed Fine Silver Electrodes for All-Solution-Processed Low-Voltage Organic Thin Film Transistors

Wei Tang,Linrun Feng,Jiaqing Zhao,Qingyu Cui,Sujie Chen,Xiaojun Guo
DOI: https://doi.org/10.1039/c3tc32134g
IF: 6.4
2014-01-01
Journal of Materials Chemistry C
Abstract:Inkjet printed silver (IJP Ag) source/drain (S/D) and gate electrodes were incorporated into a bottom-gate bottom-contact organic thin film transistor (OTFT) architecture to develop all-solution-processed low voltage OTFTs. With well controlled ink wetting on a cross-linked polyvinyl-alcohol surface, IJP Ag S/D electrode pairs were fabricated with controllable short channels down to 20 μm using a Dimatix 2831 inkjet printer with a 10 pL cartridge, and formed good contacts with the organic semiconductor layer. IJP gate electrodes with a low flat surface profile were also achieved to obtain OTFTs of high quality gate dielectric layer for low leakage current. The fabricated low voltage all-solution-processed OTFTs present good device performance with a low operation voltage below 2 V, a mobility of 0.3 cm2 V−1 s−1, and an ON/OFF current ratio larger than 104.
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