Abstract:Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H+ implantation was carried out with energies of 200 keV, 500 keV, or 1 MeV to doses of 1 × 1016, 1 × 1017, or 2 × 1017 ion/cm2, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100 °C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1 MeV implant heated to 1100 °C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 1016 O atoms/cm2 situated at a depth close to that of the peak of the implanted H+. Similarly, 1100 °C annealing of a 200 keV implant induces the formation of a thin oxide (4 nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, further investigation is under way to elucidate its presence in the irradiation-damaged films.

Transmission Electron Microscopy Investigations of Bubble Formation in He-implanted Polycrystalline SiC

The Effect of Cavities on Recrystallization Growth of High-Fluence He Implanted-Sic

Ion Irradiation Induced Bubble Relaxation in SiC

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

Microstructural and Elemental Evolution of Polycrystalline Α-Sic Irradiated with Ultra-High-fluence Helium Ions Before and after Annealing

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

Electron Field Emission from SiC/Si Heterostructures Formed by Carbon Implantation into Silicon and Etching of the Top Silicon Layer

Comparison of Cavities Formed in Single Crystalline and Polycrystalline Α-Sic after H Implantation

Diffusion and impurity segregation in hydrogen-implanted silicon carbide

Hrtem Study of SiC Buried Layer Formed by C+implantation in Silicon

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 °C

Microstructure Evolution in He-Implanted Si at 600 C Followed by 1000 C Annealing

Ion-irradiation-induced athermal annealing of helium bubbles in SiC

The effects of helium, strontium, and silver triple ions implanted into SiC

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation

Optical and Structural Properties of 6h–sic Irradiated by Coimplantation

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Vacancy Effects on the Formation of He and Kr Cavities in 3C-Sic Irradiated and Annealed at Elevated Temperatures

Bubble formation in helium-implanted nanostructured ferritic alloys at elevated temperatures

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

Multiscale Characterization of Damage Behavior of Glass-Ceramic Bonded SiC Joint under He Ion Irradiation