Abstract:Sub‐10‐nm‐thick strain‐relaxed Si1−xGex buffer layers are fabricated on Si by oxidative solid‐phase epitaxy and employed as a new platform for group III‐V heteroepitaxy on the Si platform. Si1−xGex/Si interface strain relaxation occurs via a periodic dislocation network coinciding with composition fluctuations, resulting from defect‐mediated diffusion of Si and Ge during oxidation. The explosion of artificial intelligence, the possible end of Moore's law, dawn of quantum computing, and the continued exponential growth of data communications traffic have brought new urgency to the need for laser integration on the diversified Si platform. While diode lasers on group III‐V platforms have long‐powered internet data communications and other optoelectronic technologies, direct integration with Si remains problematic. A paradigm‐shifting solution requires exploring new and unconventional materials and integration approaches. In this work, it is shown that a sub‐10‐nm ultra‐thin Si1−xGex buffer layer fabricated by an oxidative solid‐phase epitaxy process can facilitate extraordinarily efficient strain relaxation. The Si1−xGex layer is formed by ion implanting Ge into Si(111) and selectively oxidizing Si atoms in the resulting ion‐damaged layer, precipitating a fully strain‐relaxed Ge‐rich layer between the Si substrate and surface oxide. The efficient strain relaxation results from the high oxidation temperature, producing a periodic network of dislocations at the substrate interface, coinciding with modulations of the Ge content in the Si1−xGex layer and indicating the presence of defect‐mediated diffusion of Si through the layer. The epitaxial growth of high‐quality GaAs is demonstrated on this ultra‐thin Si1−xGex layer, demonstrating a promising new pathway for integrating III‐V lasers directly on the Si platform.

Fabrication of High Quality GaAs-on-insulator Via Ion-Cut of Epitaxial GaAs/Ge Heterostructure

(Invited) Ge/III-V Heterostructures and Their Applications in Fabricating Engineered Substrates

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Mos Interface Control Technologies for Iii-V/Ge Channel Mosfets

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

Ultra-thin strain-relieving Si$_{1-x}$Ge$_x$ layers enabling III-V epitaxy on Si

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Direct Integration of Iii-V Compound Semiconductor Nanostructures on Silicon by Selective Epitaxy

Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback Method

Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si

Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy

Ge-on-insulator fabrication based on Ge-on-nothing technology

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate

Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration

Heteroepitaxial GaAs thin-films on flexible, large-area, single-crystal-like substrates for wide-ranging optoelectronic applications

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions