Performance enhancement of amorphous indium-zinc-oxide thin film transistors by microwave annealing

Rui Xu,Jian He,Wei Li,David C. Paine

DOI: https://doi.org/10.1016/j.apsusc.2015.09.135

IF: 6.7

2015-01-01

Applied Surface Science

Abstract:•The performance of a-IZO TFT is improved by microwave annealing.•The effect of microwave annealing is studied comparatively.•A mechanism related with the electrical properties of a-IZO material is proposed.

What problem does this paper attempt to address?

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Yana Gao,Jianguo Lu,Jianhua Zhang,Xifeng Li

DOI: https://doi.org/10.1016/j.jallcom.2015.06.049

IF: 6.2

2015-01-01

Journal of Alloys and Compounds

Abstract:Thin film transistors (TFTs) using solution-processed aluminum indium zinc oxide (AIZO) as a channel layer were fabricated in this study. Influence of annealing temperatures on solution processed AIZO thin films surface, structural and chemical properties had been intensively investigated. The AIZO films existed in an amorphous phase even through the annealing temperature reach up to 500 degrees C. The as-prepared AIZO films with surface root-mean-square roughness values less than 0.6 nm were uniform and smooth. As the annealing temperatures exceeded 400 degrees C, the impurities and hydroxyl groups in the AIZO films had almost no change, demonstrating that the AIZO oxide formation was almost completed. Above all, the solution processed AIZO TFTs exhibit excellent device performance with high saturation mobility of 20.8 cm(2)/V s, threshold voltage of -0.39 V, small subthreshold swing of 0.13 V/dec and high on/off current ratio of 5 x 10(6). (C) 2015 Elsevier B.V. All rights reserved.
Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors

Ruofan Fu,Jianwen Yang,Qun Zhang,Wei-Chiao Chang,Chien-Min Chang,Po-Tsun Liu,Han-Ping D. Shieh

DOI: https://doi.org/10.1109/edtm.2018.8421476

2018-01-01

Abstract:Annealing effect on amorphous indium-zinc-tungstenoxide (a-IZWO) thin-film transistors (TFTs) was investigated. As the annealing temperature increases from 150 □ to 400 □ for one hour, the IZWO films remain the amorphous state being conducive to the large area uniformity. The field effect mobility of the devices increases as a function of annealing temperature and reaches to 16.2 cm 2 /V·s at 300 °C, along with the on/off current ratio of 1.6×10 8 and subthreshold swing value of 0.20 V/decade.
The Influence of Annealing Temperature on Amorphous Indium‐Zinc‐Tungsten Oxide Thin‐Film Transistors

Ruofan Fu,Jianwen Yang,Wei-Chiao Chang,Wei-Cheng Chang,Chien-Min Chang,Dong Lin,Qun Zhang,Po-Tsun Liu,Han-Ping D. Shieh

DOI: https://doi.org/10.1002/pssa.201700785

2018-01-01

physica status solidi (a)

Abstract:In this paper, the influence of annealing temperature on amorphous indium‐zinc‐tungsten‐oxide (a‐IZWO) thin‐film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is conducive to the uniformity of the TFT. The field effect mobility of the device increases as a function of annealing temperature and reaches 16.2 cm2 V−1 s−1 at 300 °C, along with an on/off current ratio of 1.6 × 108. Meanwhile, the corresponding positive bias stability is improved, as confirmed by the fact that the threshold voltage shift value reduces to 0.4 V after being stressed for 1500 s. This result can be ascribed to the decrease in electrons captured by the deep defects in a‐IZWO TFTs.
Fabrication of High-Performance A-Igzo Thin-Film Transistor with Post-Annealing Treatment

Tiantian Pi,Dongqi Xiao,Hui Yang,Xiaohan Wu,Wenjun Liu,Shi-Jin Ding,David Wei Zhang

DOI: https://doi.org/10.1109/asicon52560.2021.9620381

2021-01-01

Abstract:High performance a-IGZO thin-film transistors (TFTs) with atomic layer deposition (ALD) Al 2 O 3 dielectric are fabricated at a maximum processing temperature of 200 °C. It shows that microwave annealing conditions with microwave power of 840 W can greatly improve the electrical performance of the devices with a low thermal budget. It can be attributed to the fact that microwave annealing effectively reduces the density of trap states associated with oxygen vacancies and it enhances the quality of the a-IGZO film. Microwave annealing with low thermal budget has great potential in flexible electronic device applications.
Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Chen Yong-Yue,Wang Xiong,Cai Xi-Kun,Yuan Zi-Jian,Zhu Xia-Ming,Qiu Dong-Jiang,Wu Hui-Zhen

DOI: https://doi.org/10.1088/1674-1056/23/2/026101

2014-01-01

Chinese Physics B

Abstract:Annealing effect on the performance of fully transparent thin-film transistor（TTFT）,in which zinc tin oxide（ZnSnO）is used as the channel material and SiO2as the gate insulator,is investigated.The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2gate insulator is formed by plasma-enhanced chemical vapor deposition.The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum.Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/（V·s）and 3×105are obtained,respectively.The transfer characteristics of the ZnSnO TFT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.
High-Performance a-IGZO TFT Fabricated With Ultralow Thermal Budget via Microwave Annealing

Tiantian Pi,Dongqi Xiao,Hui Yang,Gang He,Xiaohan Wu,Wenjun Liu,David Wei Zhang,Shi-Jin Ding

DOI: https://doi.org/10.1109/ted.2021.3126692

IF: 3.1

2022-01-01

IEEE Transactions on Electron Devices

Abstract:In this work, we report high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with atomic layer deposited Al2O3 dielectric processed at a minimal temperature of 189.6 °C via microwave annealing (MWA). The a-IGZO TFT with MWA exhibits an improvement of 57% in subthreshold swing (SS) compared with the unannealed device; meanwhile, it retains high field-effect mobility of up to 29.2 cm2/(V $\cdot $ s) and large switching ratio of >108. Moreover, the SS of the device was further reduced through a two-step MWA treatment. It is believed that MWA treatment effectively reduces the density of trap states associated with oxygen vacancies, promotes the formation of lattice oxygen, and thus improves the quality of IGZO film. MWA with low thermal budget shows great potential in applications of the back-end of line (BEOL)-compatible oxide devices.

engineering, electrical & electronic,physics, applied
Effect of Annealing Temperature on Performance of Amorphous InWO Thin Film Transistors

XU Ling,WU Qi,DONG Cheng-yuan

DOI: https://doi.org/10.3788/fgxb20163704.0457

2016-01-01

Abstract:Amorphous indium tungsten oxide ( a-IWO) thin film transistors ( TFTs) show superior electrical performance and stable properties, but their industrial fabrication methods still need to be developed. In this study, the effect of annealing temperature on the electrical performance of a-IWO TFTs was investigated, where the related basic dependence and physical essence were involved. The experimental results indicate that the field-effect mobility of a-IWO TFTs increases gradually with the annealing temperature increasing, due to the more oxygen vacancies as well as the larger carrier con-centration at higher annealing temperatures. Meanwhile, annealing at 200 ℃ led to the best sub-threshold swing and threshold voltage of a-IWO TFTs, as is assumed to mainly result from the best front-channel interface caused by the smallest roughness of the a-IWO films annealed at 200 ℃.
Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing

Ching-Lin Fan,Yan-Quan Chen,Xiang-Wei Yu,Yung-Sheng Tsai

DOI: https://doi.org/10.1016/j.mssp.2024.108954

IF: 4.1

2024-09-30

Materials Science in Semiconductor Processing

Abstract:The electrical characteristics and stability of amorphous indium-zinc-tin oxide (IZTO) thin-film transistors (TFTs) were significantly improved in this study using low-energy Xenon pulsed-light annealing (PLA). In comparison to conventional furnace annealing (FA), PLA treatment significantly reduced the processing temperature and annealing time. Besides, the defect states are obviously reduced from 1.73×10 12 cm -2 to 6.53×10 11 cm -2 by PLA treatment, resulting in improved device electrical characteristics and enhanced reliability, including improved carrier mobility from 20.08 to 39.61 cm 2 /V∙s, threshold voltage from 0.82 to 0.24 V, subthreshold swing (S.S.) from 0.54 to 0.24 V/decade, and the ON/OFF current ratio from 2.32×10 7 to 7.31×10 8 . In addition, the enhanced stability is observed under both positive gate-bias stress (PGBS) of V GS = 30 V and negative gate-bias stress (NGBS) of V GS = –30 V for a stress duration of 3000 s. The threshold voltage shift (ΔV TH ) is reduced from 8.31 V to 1.65 V and from –3.93 V to –1.51 V, respectively. This is the first time low-energy PLA was conducted for IZTO TFT performance improvement.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors

Han-Lin Zhao,Gergely Tarsoly,Fei Shan,Xiao-Lin Wang,Jae-Yun Lee,Yong Jin Jeong,Sung-Jin Kim

DOI: https://doi.org/10.1038/s41598-022-24093-w

2022-11-14

Abstract:This paper examined the effects of no treatment versus plasma treatment, and femtosecond laser irradiation as pre-annealing processes on indium zinc oxide (IZO) films and annealing at high temperatures. The plasma pre-annealed multilayer stacked IZO TFTs showed better electrical properties with mobility enhancement from 2.45 to 7.81 cm2/Vs, but exhibited diminished on-off current ratio (Ion/Ioff). The IZO thin-film transistor (TFT) prepared with femtosecond laser pre-annealing with low pulse energy generation (power of 3 W at 700 nm wavelength) for 100 s has also exhibited significantly improved electrical performance, the saturation mobility increased to 4.91 cm2/Vs, the Ion/Ioff ratio was enhanced from 4.5 × 105 to 2.1 × 106, the threshold voltage improved from - 1.44 to - 0.25 V, and the subthreshold swing was reduced from 1.21 to 0.61 V/dec. In conclusion, IZO TFTs with improved performance can be prepared using a femtosecond laser pre-annealing process, which has great potential for fabricating low-cost, high-performance devices.
Microwave Annealing As a Low Thermal Budget Technique for ZnO Thin-Film Transistors Fabricated Using Atomic Layer Deposition

Lei Yue,Chao-Chao Fu,Feng Sun,Zhi-Jun Qiu,Shi-Li Zhang,Dongping Wu

DOI: https://doi.org/10.1109/led.2017.2740221

IF: 4.8157

2017-01-01

IEEE Electron Device Letters

Abstract:Microwave annealing (MWA) and furnace annealing are compared for their low thermal budget capability to improve the characteristics of ZnO-based thin-film transistors (TFTs). Both the ZnO channel and the Al2O3 gate dielectric are fabricated using atomic layer deposition. Using Si-wafer-susceptor assisted MWA with a substantial reduction of both annealing temperature and duration, significant improvements of the characteristics of the ZnO TFTs can be attained. A multi-step MWA process is found to further improve the characteristics of the TFTs. For the same microwave power and total duration, the field-effect mobility of the multi-step MWA TFT is 42% greater than that of the one-step MWA TFT with a similar sub-threshold swing. The multi-step MWA process can serve the purpose at temperatures as low as 220 °C.
Annealing effects on the performances of Bismuth-doped Indium Zinc Oxide thin-film transistors

Dong Lin,Xudong Zheng,Jianwen Yang,Kaiwen Li,Jingjing Shao,Qun Zhang

DOI: https://doi.org/10.1007/s10854-019-01655-9

2019-01-01

Abstract:In this work, annealing effects on the characteristics of bismuth-doped indium zinc oxide (IZBO) thin films and the electrical properties of IZBO thin-film transistors (TFTs) were investigated. The X-ray diffraction results reveal that all the IZBO thin films have an amorphous structure regardless of different annealing temperatures. In addition, all the a-IZBO thin films exhibit high transmittance in the visible light region. It is found that the annealing temperature has strong influences on the performances of a-IZBO TFTs. The devices annealed at 400 °C exhibit optimum performances with a field effect mobility of 25.4 cm 2 V −1 s −1 , a subthreshold swing of 0.22 V decade −1 , a threshold voltage of −1.4 V and an on-to-off current ratio of 4.3 × 10 7 . Stability of the devices under positive bias stress and negative bias stress were studied as well.
Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

Mingjun Zhang,Jinyang Huang,Zihan Wang,Paramasivam Balasubramanian,Yan,Ye Zhou,Su-Ting Han,Lei Lu,Meng Zhang

DOI: https://doi.org/10.1109/jeds.2024.3466956

2024-01-01

IEEE Journal of the Electron Devices Society

Abstract:The device performance of indium zinc oxide (IZO) thin-film transistors (TFTs) is optimized through process optimizations. By jointly adjusting the annealing condition, the channel thickness and the sputtering atmosphere, the roughness and oxygen vacancies (V(o)s) are precisely regulated. The optimized IZO TFTs can achieve the highest field effect mobility of similar to 71.8 cm(2)/Vs with a threshold voltage of similar to-0.6 V. Reliability of IZO TFTs under positive/negative bias stress is also examined. The interface quality and the Vo are two key factors influencing the device performance and reliability, confirmed by X-ray photoelectron spectroscopy and atomic force microscopy analysis.
Annealing Treatment on Amorphous InAlZnO Films for Thin-Film Transistors

Zhizhen Ye,Shilu Yue,Jie Zhang,Xifeng Li,Lingxiang Chen,Jianguo Lu

DOI: https://doi.org/10.1109/ted.2016.2587866

IF: 3.1

2016-01-01

IEEE Transactions on Electron Devices

Abstract:Amorphous InAlZnO (a-IAZO) films were grown by pulsed laser deposition at room temperature and annealed at various temperatures. The amorphous state of a-IAZO films is thermally stable at high temperatures up to 700 °C. The films exhibit a high visible transmittance above 95% and an appropriate resistivity on the order of 106 Ω · cm. As the annealing temperature increases, the optical bandgap and resistivity decrease in general. The microcracks form in films at an annealing temperature above 500 °C. The a-IAZO films annealed at 400 °C are suitable for channel layers of thin-film transistors (TFTs) and the devices demonstrate good performances with an on/off ratio of 108 and field-effect mobility of 2.2 cm2 · V-1 · s-1. The observations will provide useful physical insight into film properties and also offer basic design guideline for a-IAZO TFTs.
Microwave-Assisted Annealing Method for Low-Temperature Fabrication of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

Jong-Woo Kim,Seong-Geon Park,Min Kyu Yang,Byeong-Kwon Ju

DOI: https://doi.org/10.3390/electronics11193094

IF: 2.9

2022-09-29

Electronics

Abstract:Compared with conventional silicon-based semiconductors, amorphous oxide semiconductors present several advantages, including the possibility of room-temperature fabrication, excellent uniformity, high transmittance, and high electron mobility. Notably, the application of oxide semiconductors to flexible electronic devices requires a low-temperature fabrication process. However, for the realization of semiconductor characteristics and stable products, the fabrication process requires annealing at temperatures of 300 °C or higher. To address this, a low-temperature microwave annealing method, which improves the electrical characteristics of a transistor and reduces the production time compared with the conventional annealing method, is presented herein. Microwave annealing is a well-known method of annealing that minimizes the heat energy transferred to a substrate via instantaneous heat transfer through the vibrations of the lattice in the material during microwave irradiation and is suitable as a low-temperature annealing method. In this study, we evaluate the electrical characteristics of devices subjected to conventional annealing at 200 °C and 300 °C for 1 h and microwave annealing at 200 °C for 10 min. For the device subjected to microwave annealing at 200 °C for 10 min, the threshold voltage, current on/off ratio, subthreshold swing, and saturation mobility are 13.9 V, 1.14 × 105, 3.05 V/dec, and 4.23 cm2/V·s, respectively. These characteristic results are far superior to the characteristic results of the device subjected to conventional annealing at 200 °C for 1 h and are equivalent to those of the device treated at 300 °C for 1 h. Thus, this study develops a more effective annealing method, which facilitates low-temperature fabrication in a reduced period.

engineering, electrical & electronic,computer science, information systems,physics, applied
Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing

Xiaohui Zhang,Yaping Li,Yanwei Li,Xinwang Xie,Longhai Yin

DOI: https://doi.org/10.3390/mi15020225

IF: 3.4

2024-02-01

Micromachines

Abstract:We applied excimer laser annealing (ELA) on indium-zinc oxide (IZO) and IZO/indium-gallium-zinc oxide (IGZO) heterojunction thin-film transistors (TFTs) to improve their electrical characteristics. The IZO and IZO/IGZO heterojunction thin films were prepared by the physical vapor deposition method without any other annealing process. The crystalline state and composition of the as-deposited film and the excimer-laser-annealed films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. In order to further enhance the electrical performance of TFT, we constructed a dual-heterojunction TFT structure. The results showed that the field-effect mobility could be improved to 9.8 cm2/V·s. Surprisingly, the device also possessed good optical stability. The electron accumulation at the a-IZO/HfO, HfO/a-IGZO, and a-IGZO/gate insulator (GI) interfaces confirmed the a-IGZO-channel conduction. The dual-heterojunction TFT with IZO/HfO/a-IGZO-assisted ELA provides a guideline for overcoming the trade-off between high mobility (μ) and positive VTh control for stable enhancement mode operation with increased ID.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Zijian Yuan,Xiaming Zhu,Xiong Wang,Xikun Cai,Bingpo Zhang,Dongjiang Qiu,Huizhen Wu

DOI: https://doi.org/10.1016/j.tsf.2010.12.022

IF: 2.1

2011-01-01

Thin Solid Films

Abstract:Considering practical applications in electronic devices, we studied the growth of In2O3 thin films on amorphous glasses by magnetron sputtering at room temperature and annealing effect on the structural and electrical properties. The vacuum annealed In2O3 thin films display a grain size enlargement and preferential orientation. Electrical characterization shows that the vacuum annealed In2O3 thin films exhibit a significant enhancement of both electron density and mobility, while air ambient annealing leads to a remarkable drop. The mechanism of the electrical characteristic changes in In2O3 thin films by annealing is explored by using different scattering mechanisms. Finally, a thin film transistor device using vacuum annealed In2O3 nano-meter thin films as active channel material is demonstrated.
Effect of Thermal Annealing on the Properties of Transparent Conductive In–Ga–Zn Oxide Thin Films

Ling Li,Lina Fan,Yanhuai Li,Zhongxiao Song,Fei Ma,Chunliang Liu

DOI: https://doi.org/10.1116/1.4861352

2014-01-01

Abstract:Amorphous In–Ga–Zn oxide (IGZO) thin films were prepared using radio frequency magnetron sputtering at room temperature. Upon thermal annealing at temperatures even up to 500 °C, the amorphous characteristics were still maintained, but the electronic properties could be considerably enhanced. This could be ascribed to the increased optical band gap and the increased oxygen vacancies, as corroborated by the microstructure characterizations. In addition, the surface became smoother upon thermal annealing, guaranteeing good interface contact between electrode and a-IGZO. The optical transmittance at 400–800 nm exceeded 90% for all samples. All in all, thermal annealing at appropriate temperatures is expected to improve the performances of relevant a-IGZO thin film transistors.
Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing

Haifeng Pu,Qianfei Zhou,Lan Yue,Qun Zhang

DOI: https://doi.org/10.1088/0268-1242/28/10/105002

IF: 2.048

2013-07-25

Semiconductor Science and Technology

Abstract:In this paper, an infrared annealing method was proposed for solution-processed indium gallium zinc oxide films. The optimized IGZO thin-film transistors (TFTs) exhibited a field-effect mobility of 2.04 cm2 (Vs)–1, on–off current ratio of 1.52×106 and subthreshold swing of 0.84 V/dec. Spectroscopic analysis confirmed that the infrared irradiation could enhance the removal of organic species and dehydroxylation. The results suggest that infrared annealing method is a potential process for low-temperature preparation of solution-processed oxide semiconductor layers and dielectric layers, and can be applied to the fabrication of TFT devices.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Performance Optimization of Nanometer-Thin Indium-Tin Oxide Transistors by Two-Step Air Annealing

Qingguo Gao,Dexi Lin,Songyi Xu,Yukun Chen,Jiabing Li,Tianfan Cao,Simin Chen,Wanying Huang,Ping Liu,Chongfu Zhang

DOI: https://doi.org/10.1016/j.physb.2023.415188

2023-01-01

Abstract:In this study, the influence of air annealing on nanometer-thin indium tin oxide (ITO) transistors was investigated. Compared with unannealed devices, the field-effect mobility and subthreshold swing of ultrathin ITO transistors with pre-annealing, post-annealing, and two-step annealing were greatly improved. Under a pre annealing temperature at 200 degrees C and post-annealing temperature at 100 degrees C, the ultra-thin ITO transistors showed field-effect mobility of 34.2 cm2/Vs, steep subthreshold swing of 1.95 V/decade, and high Ion/Ioff ratio of 2.46 x 107. X-ray photoelectron spectroscopy revealed that the performance changes could be ascribed to the changes in the oxygen vacancies in the ITO channel under different annealing conditions. The dependence of subthreshold swing on the annealing process may be related to the absorption and release of water molecules from the ultrathin ITO surface. Overall, these results emphasize the importance of the annealing procedures for nanometer-thin ITO transistors.
Rapid thermal annealing effect on performance variations of solution processed indium–gallium–zinc-oxide thin-film transistors

Sunghyun Kil,Jaewook Jeong

DOI: https://doi.org/10.1063/5.0174995

IF: 1.697

2023-11-01

AIP Advances

Abstract:In this paper, the 1 min annealing effect on the electrical characteristics of solution-processed amorphous indium–gallium–zinc-oxide thin-film transistors (a-IGZO TFTs) was analyzed in an ambient gas environment comprising He, Ar, N2, and O2 and an annealing temperature range from 400 to 600 °C for different active layer thicknesses. Even for the short annealing time of 1 min, the He-annealed TFTs show good performance with a threshold voltage of −1.27 V, a subthreshold slope of 605 mV/dec, and a field-effect mobility of 7.19 cm2/Vs under the thick active layer condition. The resulting good performance of the He-annealed TFT originates from the high thermal velocity of the He atom, which can be confirmed from the x-ray photoelectron spectroscopic measurement by the sharp definition of the active layer near the a-IGZO/gate insulator interface.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

Performance enhancement of amorphous indium-zinc-oxide thin film transistors by microwave annealing

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors

The Influence of Annealing Temperature on Amorphous Indium‐Zinc‐Tungsten Oxide Thin‐Film Transistors

Fabrication of High-Performance A-Igzo Thin-Film Transistor with Post-Annealing Treatment

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

High-Performance a-IGZO TFT Fabricated With Ultralow Thermal Budget via Microwave Annealing

Effect of Annealing Temperature on Performance of Amorphous InWO Thin Film Transistors

Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing

Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors

Microwave Annealing As a Low Thermal Budget Technique for ZnO Thin-Film Transistors Fabricated Using Atomic Layer Deposition

Annealing effects on the performances of Bismuth-doped Indium Zinc Oxide thin-film transistors

Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

Annealing Treatment on Amorphous InAlZnO Films for Thin-Film Transistors

Microwave-Assisted Annealing Method for Low-Temperature Fabrication of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Effect of Thermal Annealing on the Properties of Transparent Conductive In–Ga–Zn Oxide Thin Films

Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing

Performance Optimization of Nanometer-Thin Indium-Tin Oxide Transistors by Two-Step Air Annealing

Rapid thermal annealing effect on performance variations of solution processed indium–gallium–zinc-oxide thin-film transistors