Abstract:The structural, adhesive and electronic properties of a SiO2/Al interface are investigated via first-principles calculations. The SiO2/Al interface is constructed based on SiO2 (0001) and Al (1 1 1) planes, which are respectively the close-packed planes of SiO2 and Al with a lattice mismatch of less than 1% between them. Our calculations indicate that among three differently terminated SiO2 (0001) surfaces, the SiO2 (0001) surface terminated with two oxygen atoms is the most stable one with the smallest surface energy of 1.36 J/m(2). Among three differently stacked O-terminated SiO2 (0001)/Al (1 1 1) interfaces (hollow, top and bridge), the hollow-site SiO2/Al interface has not only the smallest interfacial energy of 1.345 J/m(2) but also the largest work of adhesion of 2.51 J/m(2), and hence is the most stable one. Electronic structure investigations show that polar covalent bonding exists in the SiO2/Al interface, which can mainly be attributed to the interaction between electrons from s and p orbitals of the interfacial O atoms and those from p orbitals of the interfacial Al atoms. Coulomb's law calculations reveal that the interfacial Al-O bonding is weaker than the Si-O bonding in the bulk SiO2. Through the present investigation, an enhanced understanding of the interfacial bonding is obtained and several data are given which are very useful for the optimum design and multi-scale simulations of oxidized-SiC reinforced aluminum matrix composites.

STUDIES OF INTERFACE ATOMIC STRUCTURE OF Al2O3/Al(100) BY MeV ION SCATTERING AND CHANNELING

Studies of Surface Atomic-Structure of Al(100) by Mev Ion-Scattering

Shrunk Lattice Structure and Interdiffusion Characteristics of 5 Nm Thick Al(2)O(3) Ultrathin Films Sputtered on Silicon.

Observation on the Interface of Α-Al2o3/cr2o3: Prepared by Oxidation of Al45Cr7

Atomic-scale Structure and Electronic Property of the LaAlO3/TiO2 Interface

Formation mechanism and photoelectric properties of Al2O3 film based on atomic layer deposition

Large interlayer relaxation at a metal-oxide interface: the case of a supported ultrathin alumina film

A First-Principles Investigation of Interfacial Properties and Electronic Structure of SiO2/Al Interface

Study on ZnO/α-Al2O3 Interface Structure by X-ray Grazing Incident Diffraction

Study on the Interface of SiO2/alpha-FeOOH and SiO2/alpha-Fe2O3 Fine Particles

First-principles calculations of γ-Al2O3/Al interfaces

Interfacial Structure of Sub-Micron Al2O3 Particles in Aluminum Matrix

Atomic-scale Measurement of Structure and Chemistry of a Single-Unit-cell Layer of LaAlO3 Embedded in SrTiO3.

Atomic Structural Model of the Si/SiO_2 Interface

Understanding the Clean Interface Between Covalent Si and Ionic Al2O3

Interfacial structures of LaAlO 3 films on Si(100) substrates

Electronic Structure, Bonding, and Mechanical Strength at the Α-Al2o3 (0001)/L12-Al3zr (111) Interface by First-principles Calculations

Theoretical Study of (ag,au and Cu)/Al2O3 Interfaces

Electronic Structure, Bonding, and Mechanical Strength at the Α-Al 2 O 3 (0001)/L12-Al3zr 2-Al 3 Zr (111) Interface by First-Principles Calculations

Formation of MgAl<sub>2</sub>O<sub>4</sub> at Al/MgO Interface

First-Principles Study of the Bonding Characteristics of Tial(111)/Al2o3(0001) Interface