Abstract:Although the emerging 3D DRAM products can significantly improve the computing system performance, the relatively high cost is one of the most critical issues that prevent their wide real-life adoption. Intuitively, a strong memory fault tolerance can be leveraged to reduce the fabrication cost of DRAM dies, and the total cost will reduce if the fabrication cost saving can off-set the cost overhead of memory fault tolerance. Nevertheless, such a simple concept can be a practically viable option only for 3D DRAM because: (1) The stacked logic die can solely implement memory fault tolerance inside 3D DRAM chips, obviating any changes on the host CPUs and CPU-DRAM interfaces. (2) With the total ownership of both the logic die and DRAM dies inside 3D DRAM chips, DRAM manufacturers can fully exploit the potential to truly minimize the 3D DRAM bit cost. Following this intuition, we developed a 3D DRAM fault tolerance design strategy. It can achieve a very strong tolerance to weak DRAM cells at very small redundancy and latency overhead. The key is to cohesively leverage the detectability of weak cells and runtime configurability of error correction code (ECC) decoding. In addition, this design strategy can gracefully embrace the inaccuracy of weak cell detection (e. g., weak cell miss-detection and false-detection). We carried out thorough mathematical analysis, and the results show that, under the redundancy overhead of 1: 8 (same as today's ECC DIMM), this design strategy can tolerate the weak cell rate of as high as 10(-4) and 6 x 10(-5) if 100 and 90 percent of all the weak cells are known in prior. Using Micron's hybrid memory cube (HMC) 3D DRAM chips as the test vehicle, we evaluated the implementation cost and the results show that it only consumes less than 0.4 mm(2) (45 nm node) on the logic die. Using CPU and DRAM simulators, we further carried out simulations over a variety of computing benchmarks and the results show that this design solution only incurs less than 2 percent performance degradation on average.

Decoupling capacitance for the power integrity of 3D-DRAM-over-logic system

Silicon-Validated Power Delivery Modeling and Analysis on a 32-Nm DDR I/O Interface.

A Cross-Process Signal Integrity Analysis (CPSIA) Method and Design Optimization for Wafer-on-Wafer Stacked DRAM

Logic-DRAM co-design to efficiently repair stacked DRAM with unused spares

Improving 3D DRAM Fault Tolerance Through Weak Cell Aware Error Correction.

Logic-DRAM Co-Design to Exploit the Efficient Repair Technique for Stacked DRAM

Characterization and Mitigation of Electromigration Effects in TSV-Based Power Delivery Network Enabled 3D-Stacked DRAMs

Power Integrity Modeling, Measurement and Analysis of Seven-Chip Stack for TSV-based 3D IC Integration

Architecture design exploration of three-dimensional (3D) integrated DRAM

The Optimization of Spacer Engineering for Capacitor-Less DRAM Based on the Dual-Gate Tunneling Transistor

Analysis and Design of the Interposer PDN With Optimal Arrangement of Decoupling Capacitors

A Customized Design Of Dram Controller For On-Chip 3d Dram Stacking

Mitigating WL-to-WL Disturbance in Dynamic Random-Access Memory (DRAM) through Adopted Spherical Shallow Trench Isolation with Silicon Nitride Layer in the Buried Channel Array Transistor (BCAT)

System-Technology Co-Optimization for 3D Monolithic Memory-Centric Computing

Design of 3D DRAM and Its Application in 3D Integrated Multi-Core Computing Systems

A 3D SoC Design for H.264 Application with On-Chip DRAM Stacking

Modeling of Peak-to-peak Core Switching Noise, Output Impedance, and Decoupling Capacitance along a Vertical Chain of Power Distribution TSV Pairs

Power Integrity Optimization of 3d Chips Stacked Through Tsvs

Distributed memory interface synthesis for network-on-chips with 3D-stacked DRAMs

3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence

Innovative Capacitorless SOI DRAMs