Abstract:State-of the-art infrared photodetectors operating in the mid- and long-wavelength infrared (MWIR and LWIR) are largely dominated by cryogenically cooled quantum sensors when the target is the highest sensitivity and detection speeds. Nano-thermoelectrics provide a route towards competitive uncooled infrared bolometer technology that can obtain high speed and sensitivity, low-power operation, and cost-effectiveness. We demonstrate nano-thermoelectric LWIR bolometers with fast and high-sensitivity response to LWIR around 10 $\mu$m. These devices are based on ultra-thin silicon membranes that utilize the dimensional scaling of silicon nanomembranes in thermoelectric elements and are combined with metallic nanomembranes with subwavelength absorber structures. The fast device performance stems from a low heat capacity design where the thermoelectric beams act both as mechanical supports and transducer elements. Furthermore, by scaling down the thickness of the thermoelectric beams the thermal conductivity is reduced owing to enhanced phonon boundary scattering, resulting in increased sensitivity. The nano-thermoelectric LWIR bolometers are based on 40-nm-thick n- and p-type silicon membranes with LWIR (voltage) responsivities up to 1636 V/W and 1350 V/W and time constants in the range of 300-600 $\mu$s, resulting in specific detectivities up to $1.56\times10^8$ cmHz$^{1/2}$/W. We also investigate the use of a heavily doped N++ substrate to increase optical cavity back reflection, resulting in an increased Si substrate reflectance from 30% to 70%-75% for wavelengths between 8-10 $\mu$m, resulting in an increase in device responsivity by approximately 20%.

A Double-Sacrificial-Layer Uncooled Infrared Microbolometer in A Standard Cmos Process

Microbolometer with a Salicided Polysilicon Thermistor in CMOS Technology.

Low-Cost Microbolometer Type Infrared Detectors

A High Linearity Readout Integrated Circuit for Uncooled IR Detector

Ultrafast Silicon Nanomembrane Microbolometer for Long-Wavelength Infrared Light Detection

A CMOS Integrated W-band Passive Imager

A High-resolution Colloidal Quantum Dot Imager by Monolithic Integration

DESIGN OF MICROBOLOMETER BY POLYCRYSTALLINE SILICON IN STANDARD CMOS TECHNOLOGY

Study on new structure uncooled a-Si microbolometer for infrared detection

Uncooled Infrared Detection Using CMOS Thermomechanical Capacitive Sensors

Performance-Enhanced Polysilicon Microbolometer in CMOS Technology with a Grating Structure

Infrared Bolometers Based on 40-nm-Thick Nano-Thermoelectric Silicon Membranes

Integrated A-Si : B Microbolometer Arrays Based on Improved Porous Silicon Micromachining Techniques

SiGe/Si Multi-Quantum-Well Micro-Bolometer Array Design and Fabrication with Heterogeneous Integration

An uncooled microbolometer infrared detector based on poly-SiGe thermistor

Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process

Process Optimization and Performance Improvement of CMOS Microbolometer with A Salicided Polysilicon Thermistor

Low‐noise Readout Circuit for Thermo‐electrical Cooler‐less Uncooled Microbolometer Infrared Imager

Current Input Pixel-Level ADC with High SNR and Wide Dynamic Range for a Microbolometer

Nano-thermoelectric infrared bolometers

The Performance Enhancement of Polysilicon Microbolometer in Standard CMOS Technology with Si3N4 Film