Abstract:NO post-oxidation annealing (POA) processes with different temperatures and durations are simultaneously studied on the n-type and p-type 4H-SiC MOS capacitors. The results from Secondary Ion Mass Spectroscopy (SIMS) reveal that nitrogen diffuses further into the SiO2 layer for the samples annealed at higher temperature (1250 °C). Furthermore, the area densities of nitrogen for the n-type samples are about 1.3 times larger than the p-type samples. The densities of negative effective fixed dielectric charge (Neff) and slow-state electron traps are effectively decreased with increasing annealing time and temperature for the n-type samples. However, the introduced nitrogen leads to more the deep energy-level traps [0.5–0.6 eV above the valence band edge (Ev)] in the p-type samples, which can exchange electrons with near-interface traps in response to the alternating current (AC) signal below 10 kHz. Besides, the densities of the slow-state hole traps, which are obviously increased at low temperature but raised slowly at high temperature, are mainly affected by the temperature of the NO POA process and not only the density of incorporated nitrogen. Therefore, NO annealing at high temperature with a short duration (at 1250 °C 1 h) may be a good choice to optimize NO POA treatment for n-channel 4H-SiC MOSFETs, based on comprehensive consideration of the influence of different NO POA conditions on n-type and p-type MOS capacitors.

Investigation of N-Type 4H-Sic Wet Re-Oxidation Annealing Process and SiO2/SiC Interface

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

Improving Interface Quality of 4H-Sic MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace

High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors

Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

Improvement of Interface Properties for Thermally Oxidized SiC/SiO2 MOS Capacitor by Post Oxidation Annealing Treatment

A 4H-SiC Trench MOS Capacitor Structure for Sidewall Oxide Characteristics Measurement

Influence of Various NO Annealing Conditions on N-type and P-type 4H-Sic MOS Capacitors

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Effect of Post Oxidation Annealing in Nitric Oxide on Interface Properties of 4H-Sic/sio2 after High Temperature Oxidation

Reliability of 4H-Sic (0001) MOS Gate Oxide by NO Post-Oxide-Annealing

The Ohmic Contact of 4H-Sic Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing

Interface Properties Study on SiC MOS with High-Κ Al2O3 Gate Dielectric

Interface Properties Study On Sic Mos With High-Kappa Al2o3 Gate Dielectric

The Study of Physical and Irradiation Properties of SiO_2/SiC Interface

Investigation of a 4H—SiC metal—insulation—semiconductor structure with an Al2O3/SiO2 stacked dielectric

The Correlation Between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing Conditions