The Effect of Co2 on the High-Rate Homoepitaxial Growth of Cvd Single Crystal Diamonds
Y. Su,H. D. Li,S. H. Cheng,Q. Zhang,Q. L. Wang,X. Y. Lv,G. T. Zou,X. Q. Pei,J. G. Xie
DOI: https://doi.org/10.1016/j.diamond.2011.02.001
IF: 3.806
2011-01-01
Diamond and Related Materials
Abstract:Various gases such as N2, O2, and CO2 have been introduced in the typical reaction atmosphere of CH4/H2 and proposed to improve the growth of chemical vapor deposited (CVD) single-crystal diamonds (SCDs). In this paper, we study the influence of a new adding gas nitrous oxide (N2O) on the growth rate, morphology, and optical properties of homoepitaxy (100) CVD SCDs. The reaction pressure (H2/CH4 flow rates) was fixed at 300Torr (750/90 in sccm) with the addition of a small amount of N2O gas varied at flow rates of 0, 2, 5, 8 and 10sccm. With the appropriate addition of N2O, the growth rate was increased up to 135μm/h and the surface roughness was decreased to around 2nm. Furthermore, adding N2O is favorable for inhibiting the generation of large anti-pyramidal pits on the top surface of SCDs, which generally appeared in the products synthesized in CH4/H2 ambient. The combined effect of the nitrogen- and oxygen-related radicals decomposed from N2O on the growth and properties of the CVD SCDs is discussed. As a result, the addition of N2O provides a new route to realize high-rate growth CVD SCDs instead of the traditional nitrogen.