Abstract:Polycrystalline diamond growth by microwave plasma chemical vapor deposition (MPCVD) at high-pressure (34.5 kPa) was investigated. The CH₄/H₂/O₂plasma was detected online by optical emission spectroscopy (OES), and the spatial distribution of radicals in the CH₄/H₂/O₂plasma was studied. Raman spectroscopy was employed to analyze the properties of the diamond films deposited in different oxygen volume fraction. The uniformity of diamond films quality was researched. The results indicate that the spectrum intensities of C₂, CH and Hα decrease with the oxygen volume fraction increasing. While the intensity ratios of C₂, CH to Hα also reduced as a function of increasing oxygen volume fraction. It is shown that the decrease of the absolute concentration of carbon radicals is attributed to the rise volume fraction of oxygen, while the relative concentration of carbon radicals to hydrogen atom is also reducing, which depressing the growth rate but improving the quality of diamond film. Furthermore, the OH radicals, role of etching, its intensities increase with the increase of oxygen volume fraction. Indicated that the improvement of OH concentration is also beneficial to reduce the content of amorphous carbon in diamond films. The spectrum space diagnosis results show that under high deposition pressure the distribution of the radicals in the CH₄/H₂/O₂plasma is inhomogeneous, especially, that of radical C₂ gathered in the central region. And causing a rapid increase of non-diamond components in the central area, eventually enable the uneven distribution of diamond films quality.

Analysis Of Optical Emission Spectroscopy In Diamond Chemical Vapor Deposition

Optical Spectroscopy Diagnosis of Methane Plasma Generated with Atmospheric Pressure Jet

[Optical Spectroscopy for High-Pressure Microwave Plasma Chemical Vapor Deposition of Diamond Films]

Spectroscopic Determination of Rotational Temperature in C2H4/C2H2/O2 Flames for Diamond Growth with and Without Tunable CO2 Laser Excitation.

Mechanism of Diamond Nucleation Enhancement by Filament Carburization in HFCVD Process

Research on Excimer Laser Induced Chemical Vapor Deposition of Diamond Films

Diagnosis of dielectric barrier discharge CH4 plasmas for diamond-like carbon film deposition

Characterization of A-C:H:n Deposition from CH4/N2 Rf Plasmas Using Optical Emission Spectroscopy

Diagnostics of CH/sub 4/ plasmas used for diamond-like carbon deposition

Influence of O2 on Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

A Study of Diamond-Like Carbon Thin Films Prepared by Microwave Plasma Chemical Vapour Deposition

Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2 gas mixture

Thermodynamics Analyses of the Effect of CH 3 and C 2 H 2 on Morphology of CVD Diamond Films

Thermodynamic Analysis for Vapor-Grown Diamond

Monte Carlo Simulation of Electron Velocity Distribution and Gas Phase Process in Electron-Assisted Chemical Vapor Deposition

Characterization of diamond thin films deposited by a CO2 laser-assisted combustion-flame method

Deposition of nano-diamond-like carbon films by an atmospheric pressure plasma gun and diagnostic by optical emission spectrum on the process

Diamond-Like Carbon Thin-Film Deposition Using A Magnetically Confined Rf Pecvd System

Spectroscopic Study on the Evolution of Graphite Ablation Plume in ECR Argon Plasma During the Deposition of Diamond-Like Carbon Films

Optical and Electronic-Properties of Amorphous Diamond