Abstract:Due to the slow scaling of board and package technology, on-chip inductor has shown promising potential to enable more compact design and smaller parasitics for inductor-based designs, such as voltage regulator, resonant clocking, filter, etc. On the other hand, conventional on-chip 2D spiral inductor must be placed on the top metal layers, thereby consuming significant routing resources for global interconnects. Moreover, it may need more dedicated shielding to prevent unnecessary coupling, which further increases its occupied area. With the popularity of 2.5D and 3D chip architecture, Through-Silicon-Via (TSV) has been widely used, a significant portion of which are placed for thermal/manufacturability/reliability purposes. Thus, those redundant TSVs can be utilized to form the on-chip inductor for 2.5D/3D chips, with lower footprint and higher inductance density compared from the conventional spiral inductor. Unlike prior works focusing on the inductor itself, this paper discusses the optimization and application of such TSV-inductor from system perspective, including the optimization options and its design considerations. The possible design options including physical parameters, architecture and materials, to optimize the TSV-inductor are thoroughly investigated. Based on that, we further study a few key design scenarios to evaluate the design impact with use of such TSV-inductor and provide the design guidelines for its application in actual system designs.

A New System-on-a-chip (SOC) Technology High Q Post Passivation Inductors

High-Q Integrated Inductor Using Post-Cmos Selectively Grown Porous Silicon (sgps) Technique for Rfic Applications

Experimental Characterisation Of On-Chip Octagonal Double-Helix Inductors On Silicon Substrates

High-Q On-Chip Inductors Embedded in Wafer-Level Package for RFIC Applications

Modelling On-Chip Circular Double-Spiral Stacked Inductors for RFICs

A 1.3–1.7-Ghz $Q$ -Enhanced Resonator-Based High-IF Bandpass Filter with 1.5%–67% Tunable Fractional Bandwidth in 65-Nm CMOS Process

System-level Design Consideration and Optimization of Through-Silicon-via Inductor.

Asic Design of an Integrable Simulated Inductor with Huge Inductance

On-chip Vertical Tapered Solenoid Inductor with High Self-Resonance Frequency

Design of a Novel High Q On-Chip Non-solenoid MEMS Inductor

High Q-factor CMOS-MEMS inductor

Backside Growth Thick Porous Silicon Layers for High Q On-Chip Rf Integrated Inductors

Design, Fabrication and Characterization of a Novel TSV Interposer Integrated Inductor for RF Applications

Simulation and Optimization of High Performance On-Chip Solenoid MEMS Inductor

High-Q CMOS-compatible micromachined edge-suspended spiral inductors

Physical Models of Planar Spiral Inductor Integrated on the High-Resistivity and Trap-Rich Silicon-on-Insulator Substrates

On-chip soft-ferrite-integrated inductors for RF IC

Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA

Analysis of A Low-Inductance Packaging Layout for Full-Sic Power Module Embedding Split Damping

CMOS-Compatible Micromachined Edge-Suspended Spiral Inductors With High Q-Factors and Self-Resonance Frequencies

High-Performance Edge-Suspended Spiral Inductors And Cpws On Cmos-Grade Silicon Substrates