Abstract:Lasers are nowadays widely used in industry, in hospitals and in many devices that we have at home. Random laser development is challenging given its high threshold and low integration. Surface plasmon polariton (SPP) can improve random laser characteristics because of its ability to control diffraction. In this study, we establish a random laser structural model with silicon-based parcel GaN nanowires. The GaN nanowire gain and enhanced surface plasmon increase population inversion level. Our laser model is based on random particle scattering feedback mechanism, nanowire use, and surface plasmon enhancement effect, which causes stochastic laser emergence. Analysis shows that the SPP mode and nanowire waveguides coupled in the dielectric layer of low refractive index can store light energy like a capacitor under low refractive index clearance. The waveguide mode field area and limiting factors show that the modeled laser can achieve sub-wavelength constraints of the output light field. We also investigate emergent laser performance for a more limited light field capacity and lower threshold.

Electrically pumped random lasers with p-diamond as a hole source

Electrically Pumped Random Lasing from ZnO Materials

Electric-field-induced Random Lasing from ZnO and Mg0.1Zn0.9O Films Optically Pumped with an Extremely Low Intensity.

Electrically Pumped Random Lasing from the Light-Emitting Device Based on Two-Fold-Tandem Sio2/Zno Structure

Electrically Pumped ZnO Film Ultraviolet Random Lasers on Silicon Substrate

Low-Threshold Electrically Pumped Random Lasers

Electrically pumped random lasing based on Au-ZnO nanowire Schottky junction

Electrically Pumped Ultraviolet Random Lasing from Heterostructures Formed by Bilayered Mgzno Films on Silicon

Electrically pumped random lasing based on an Au-ZnO nanowire Schottky junction.

Electrically Pumped Ultraviolet Random Lasing from ZnO Films: Compensation Between Optical Gain and Light Scattering

Electrically Pumped Random Lasing with an Onset Voltage of Sub-3 V from ZnO-based Light-Emitting Devices Featuring Nanometer-Thick MoO3 Interlayers.

Suppression of Randomness in Electrically Pumped Random Lasing from a ZnO Film-Based Light-Emitting Device on Silicon.

Electrically Pumped Lasing from P-Zno/N-Gan Heterojunction Diodes

Electrically Pumped Random Lasing from Fto/Porous Insulator/N-Zno/P(+)-Si Devices

Low-threshold Electrically Pumped Ultraviolet Random Lasing from ZnO Film Prepared by Pulsed Laser Deposition?

Electrically Pumped Ultraviolet Random Lasing Action from P-Nio/n-gan Heterojunction

A random laser based on diamond nanoneedles

Electrically Pumped Wavelength-Tunable Blue Random Lasing from Cdzno Films on Silicon

Electrically pumped wavelength-tunable ultraviolet random lasing from MgxZn1-xO films on Si

Surface Plasmon Enhanced Electrically Pumped Random Lasers

New surface plasmon polariton waveguide based on GaN nanowires