Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Electrically pumped random lasing based on an Au-ZnO nanowire Schottky junction.

Electrically pumped random lasing based on Au-ZnO nanowire Schottky junction

Electrically Pumped Random Lasing from ZnO Materials

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Electrically Pumped Random Lasing with an Onset Voltage of Sub-3 V from ZnO-based Light-Emitting Devices Featuring Nanometer-Thick MoO3 Interlayers.

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Electrically Pumped Wavelength-Tunable Blue Random Lasing from Cdzno Films on Silicon

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Low-threshold Electrically Pumped Ultraviolet Random Lasing from ZnO Film Prepared by Pulsed Laser Deposition?

Electrically pumped wavelength-tunable ultraviolet random lasing from MgxZn1-xO films on Si

Electrically Pumped Random Lasing from the Light-Emitting Device Based on Two-Fold-Tandem Sio2/Zno Structure

Ultraviolet Electroluminescence from Au-Zno Nanowire Schottky Type Light-Emitting Diodes

Electrically Pumped Ultraviolet Random Lasing from ZnO Films: Compensation Between Optical Gain and Light Scattering

Electrically Pumped Ultraviolet Random Lasing from ZnO-based Metal-Insulator-semiconductor Devices: Dependence on Carrier Transport

Optically and Electrically Pumped Random Lasing from ZnO Films Annealed at Different Temperatures

Electrically Pumped Random Lasing from Fto/Porous Insulator/N-Zno/P(+)-Si Devices

A Chemical Strategy to Reinforce Electrically Pumped Ultraviolet Random Lasing from ZnO Films

Electrically Pumped Ultraviolet Random Lasing from Heterostructures Formed by Bilayered Mgzno Films on Silicon

Random lasing from gold-doped zinc oxide nanorods