Abstract:In this paper, a gallium nitride (GaN) vertical superjunction (SJ) MOSFET with trench gate is proposed and studied by the TCAD simulation. In order to achieve the typical electric field ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field) modulation effect by the P + /N/N + structure in the conventional Si SJ-MOS, the P-GaN/unintentional doped (UID)-GaN/N + -GaN stack is alternatively used by taking into account the unavailability of P + -GaN. In this manner, the P-GaN and N + -substrate serve as the field-stop (FS) layers in the proposed GaN SJ-MOS. In the forward bias, the enhancement-mode function of the device is enabled by the gated side-wall and aperture composite channel that leads to a 1.47-V threshold voltage of the device. In the reverse bias, the breakdown of the device is governed by two mechanisms: 1) the punchthrough (PT) in the top P-GaN/N-drift junction due to the possible under design of the P-GaN thickness; 2) the avalanche breakdown triggered by high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field due to the possible under design of the bottom UID-GaN thickness. Hence, from the uniform <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field distribution point of view, a device optimization approach for GaN vertical SJ-MOS is proposed. The hole and electron densities of P-GaN and N-drift are optimized to achieve a uniform <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field distribution in the device both in the lateral and vertical directions, which is found to be <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$6 \times 10^{16}$ </tex-math></inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-3}$ </tex-math></inline-formula> . Moreover, the thickness ratio of P-GaN/UID-GaN is designed to obtain an identical intrinsic breakdown for the top P-GaN/N-drift junction and bottom UID/N-drift region, which enables the maximum Baliga’s figure-of-merit (BFOM) of the device. The concept of device design and optimization is of great interests for GaN vertical device for over kilovolts applications.

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Simulation Design of High Baliga's Figure of Merit Normally-off P GaN Gate AlGaN/GaN Heterostructure Field Effect Transistors with Junction Field Plates

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Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates