Abstract:A two-dimensional electron gas (2DEG) in (Al, Ga) N/GaN heterojunction (AlGaN/GaN) is a key factor that affects the performance of GaN-based high electron mobility transistor (HEMT) devices. Previous studies have shown that the ferroelectric polarization can effectively control the density of the 2DEG at the AlGaN/GaN interface; however, the correlation between two-dimensional distribution of ferroelectric polarization (i.e., ferroelectric domains) and its ability to confine the 2DEG is yet to be investigated. In this work, ferroelectric domain-induced modulation of the 2DEG in the AlGaN/GaN heterostructure was characterized using microscopic as well as local transport measurement techniques. The results suggest direct evidence for effective ferroelectric domain engineering in GaN HEMTs, as predicted by theoretical calculations. Additionally, a prototype device was fabricated, where gating was realized by utilizing the polarization of the ferroelectric domain. Considering the nonvolatile and reconfigurable advantages of a ferroelectric domain, the E-mode, D-mode, and even multi-channel output characteristics were realized in the same device by artificially engineered ferroelectric domain structures. These results offer a promising solution for the contradiction between the 2DEG density and gate controllability in GaN HEMTs, thereby showing a great potential of GaN radio frequency devices with further scaled gate lengths down to a few nanometers in the future.

Theoretical Investigation of High-Voltage Self-Charge-Balanced Superjunction AlGaN/GaN Heterojunction Field Effect Transistors with Nanoscale Polarization-Doped AlGaN Layer

Theoretical Investigation of High-Voltage Superjunction GaN-based Vertical Hetero- Junction Field Effect Transistor with Ununiformly Doped Buffer to Suppress Charge Imbalance Effect

The improvement of breakdown-voltage (¿2000 V) in GaN based HFETs by using double polarization junctions

High‐voltage AlInN/GaN Superjunction Fin‐gate High Electron Mobility Transistor for Power‐switching Application

Enhancement-mode AlGaN/GaN HFET with Buried-Junction-barrier for Breakdown Improvement and Threshold-Voltage Modulation

Simulation Design of High Baliga's Figure of Merit Normally-off P GaN Gate AlGaN/GaN Heterostructure Field Effect Transistors with Junction Field Plates

A Novel Junction Field Plates AlGaN/GaN Heterostructure Field Effect Transistors with High Breakdown Voltage and Baliga's Figure of Merit for Power Electronics Application

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Design and Simulation of a Nanoscale GaN-Based Vertical HFET with Pnp-Superjunction Buffer Structure

Ferroelectric domain modulated AlGaN/GaN field effect transistor

High Voltage AlGaN/GaN HFET Employing Low Taper Angle Field-Plate for Stable Forward Blocking Capability

Simulation of Enhancement-Mode Recessed-Gate P-Channel HFETs Based on Polarization-Induced Doping and an InGaN/GaN/AlGaN Heterostructure

Simulation of a High-Performance Enhancement-Mode HFET with Back-to-back Graded AlGaN Layers

Novel High Voltage RESURF Al GaN/GaN HEMT with Charged Buffer Layer

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors

Normally-off AlN/β-Ga2O3 Field-Effect Transistors Using Polarization-Induced Doping

Enhancement-mode N-Gan Gate P-Channel Heterostructure Field Effect Transistors Based on GaN/AlGaN 2D Hole Gas

Ferroelectric Field Effect Transistor with A Double-Gate Structure on Algan/Gan Heterostructures

Investigation into the Energy Band Diagram and Charge Distribution in AlGaN/GaN Double Heterostructures by Self-Consistent Poisson–Schrödinger Calculations

High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer