Abstract:The complex conductive behavior of ferroelectric domain walls is attracting more and more attention for their potential application as an independent nanoelectronic component. For the (001) epitaxial BiFeO3 films, we find that the domain wall conductivity varies among 71° domain walls, with tail-to-tail (T-T) domain walls more conductive than head-to-head (H-H) and head-to-tail (H-T) ones. Furthermore, it is observed that most of the conductive areas are composed of two parallel lines around the T-T domain walls. These experimental results can be well simulated by our theoretical model based on the polarization configuration and a tunneling mechanism. Our work will help to understand the mechanism of domain wall conductance in ferroelectric materials and further promote the usage of domain walls in advanced nano-devices.The complex conductive behavior of ferroelectric domain walls is attracting more and more attention for their potential application as an independent nanoelectronic component. For the (001) epitaxial BiFeO3 films, we find that the domain wall conductivity varies among 71° domain walls, with tail-to-tail (T-T) domain walls more conductive than head-to-head (H-H) and head-to-tail (H-T) ones. Furthermore, it is observed that most of the conductive areas are composed of two parallel lines around the T-T domain walls. These experimental results can be well simulated by our theoretical model based on the polarization configuration and a tunneling mechanism. Our work will help to understand the mechanism of domain wall conductance in ferroelectric materials and further promote the usage of domain walls in advanced nano-devices.

1D Modulation: Atomic Level 1D Structural Modulations at the Negatively Charged Domain Walls in BiFeO<sub>3</sub> Films (Adv. Mater. Interfaces 9/2015)

Atomic Level 1D Structural Modulations at the Negatively Charged Domain Walls in BiFeO3 Films

Imaging and Quantification of Charged Domain Walls in BiFeO3

Unveiling the Pinning Behavior of Charged Domain Walls in BiFeO3 Thin Films Via Vacancy Defects

Atomic Scale Structure Changes Induced by Charged Domain Walls in Ferroelectric Materials.

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Ultrathin Non‐Ising Charged Domain Walls Confined in BiFeO3 Nanocrystals

Atomic-scale mapping of dipole frustration at 90° charged domain walls in ferroelectric PbTiO3 films

Negatively Charged In-Plane and Out-Of-Plane Domain Walls with Oxygen-Vacancy Agglomerations in a Ca-Doped Bismuth-Ferrite Thin Film

Atomic-Scale Evolution of Local Electronic Structure Across Multiferroic Domain Walls

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Atomic Mapping of Structural Distortions in 109° Domain Patterned BiFeO3 Thin Films

Dynamics and Manipulation of Ferroelectric Domain Walls in Bismuth Ferrite Thin Films.

Atomic-scale Study of Electric Dipoles Near Charged and Uncharged Domain Walls in Ferroelectric Films

Conductive Tail-to-tail Domain Walls in Epitaxial BiFeO3 Films

Interface Engineering Of Domain Structures In Bifeo3 Thin Films

In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film

Domain Structure of Multiferroic Oxide Thin Films with Rhombohedral Perovskite Structure

Ferroelectric polarization and magnetic structure at domain walls in a multiferroic film

Oxygen Octahedral Coupling Mediated Ferroelectric-Antiferroelectric Phase Transition Based on Domain Wall Engineering

Atomic-environment-dependent thickness of ferroelastic domain walls