Design Principles of Tuning Oxygen Vacancy Diffusion in Srzro3 for Resistance Random Access Memory

Zhonglu Guo,Linggang Zhu,Jian Zhou,Zhimei Sun

DOI: https://doi.org/10.1039/c5tc00302d

IF: 6.4

2015-01-01

Journal of Materials Chemistry C

Abstract:Resistance random access memory (RRAM) is known to be a promising candidate for next generation non-volatile memory devices, in which the diffusion of oxygen vacancies plays a key role in resistance switching.

What problem does this paper attempt to address?

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Tan-Yi Li,Da-Wei Wang,Sichao Du,Wenchao Chen,Wen-Yan Yin

DOI: https://doi.org/10.1109/ICCEM47450.2020.9219521

2020-01-01

Abstract:Electrothermal performance of Resistive Random Access Memory (RRAM) composed of five different resistive switching oxides is studied numerically in this paper. Finite element method-based parallel computing simulator is employed to conduct the electrothermal simulation of both RRAM cell and array. Simulation results indicate that NiO and ZrO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs generate higher heat than HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> , TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> and ZnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs, as their electric conductivity are higher in the same voltage. During the reset, ZnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAM requires lower voltage to be transferred into high-resistance state due to its higher oxygen vacancy drift rate. The heat crosstalk problem in RRAM array is also investigated, which can decrease reliability during the reset of RRAM. Inactive cells can be transferred into high-resistance state unintentionally with stored information lost. In the same voltage, both HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> and TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs are less affected by heat crosstalk due to their lower oxygen vacancy drift rate.
Role of Oxygen Vacancies in the Resistive Switching of SrZrO3 for Resistance Random Access Memory

Zhonglu Guo,Baisheng Sa,Jian Zhou,Zhimei Sun

DOI: https://doi.org/10.1016/j.jallcom.2013.05.030

IF: 6.2

2013-01-01

Journal of Alloys and Compounds

Abstract:SrZrO3 (SZO) is an important recording material for resistance random access memory (RRAM), which is attracted increasing interest for future nonvolatile memory applications. However, the resistive switching (RS) mechanism is not yet fully understood. In this work, by first principles calculations based on the density functional theory, we have investigated the structure and properties of bulk SZO with ordered and disordered oxygen vacancies (V-O). Our results show that the formation of oxygen vacancy row (V-O-row) results in the defect assisted conduction channel, which is the "ON''-state of SZO RRAM, while the disruption of the ordered V-O-row breaks this conduction channel and hence this structure is the "OFF''-state of SZO RRAM. The formation and disruption of V-O-row is triggered by the applied electric field through electron injection and removal. (C) 2013 Elsevier B.V. All rights reserved.
Ionic Doping Effect In Zro2 Resistive Switching Memory

Haowei Zhang,Bin Gao,Bing Sun,Guopeng Chen,Lang Zeng,Lifeng Liu,Xiaoyan Liu,Jing Lü,Ruqi Han,Jinfeng Kang,Bin Yu

DOI: https://doi.org/10.1063/1.3364130

IF: 4

2010-01-01

Applied Physics Letters

Abstract:Oxygen vacancy (V-O) plays the critical role for resistive switching in transition metal oxide resistive random access memory (RRAM). First principles calculation is performed to study the impact of metallic ion (Al, Ti, or La) doping in ZrO2 on the behaviors of V-O, including defect energy level and formation energy (E-v(f)). Trivalent dopant (Al or La) significantly reduces E-v(f). Based on the calculated results, ZrO2-based RRAM devices are designed to control the formation of V-O, and improved resistive switching uniformity is demonstrated in experiments.
Design and Application of Resistive Switching Devices for Novel Computing/Memory Architectures

Jinfeng Kang,Peng Huang,Haitong Li,Bin Gao,Yudi Zhao,Runze Han,Zheng Zhou,Zhe Chen,Chen Liu,Lifeng Liu,Xiaoyan Liu

DOI: https://doi.org/10.1109/icsict.2016.7998875

2016-01-01

Abstract:Oxide-based resistive random access memory (RRAM) has been widely studied as the promising candidate for the applications of next generations of data storage and computing technologies. In this paper, we will discuss the physical mechanism and optimization design of oxide-based RRAM devices, the novel RRAM-based computing/memory unifying architectures and the applications for data storage and computing technologies.
A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

Bin Gao,Bing Chen,Feifei Zhang,Lifeng Liu,Xiaoyan Liu,Jinfeng Kang,Hongyu Yu,Bin Yu

DOI: https://doi.org/10.1109/ted.2013.2245508

IF: 3.1

2013-01-01

IEEE Transactions on Electron Devices

Abstract:A novel strategy based on defect engineering is proposed for high-performance multibit data storage in oxide-based resistive random access memory (RRAM). Key innovations are: 1) material-oriented cell engineering for desired modification of physical locations of generated oxygen vacancies in resistive switching layer; and 2) operation scheme to control the amount of oxygen vacancy generated in the conducting filament regions during switching. Proper doping approach is applied to suppress the formation of oxygen vacancy clusters due to the avalanching effect in the forming and SET processes. Gradual resistive switching process is observed in the devices with proper doping at the proper switching operation modes. Multilevels of resistance states are measured by the optimized dc or ac switching mode. Excellent memory performance with four-level data storage (good resistance uniformity under pulse switching, retention >10(4) s at 150 degrees C, and endurance >10(6) cycles) is successfully demonstrated in hafnium oxide-based RRAM devices, indicating the viability of the proposed engineering design strategy. The proposed methodology helps to understand the mechanism of multilevel switching and provides guidelines for the design of high-performance multibit resistive switching memory devices.
Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Chang,Tsung-Ming Tsai,Rui Zhang,Ya-Chi Hung,Yong-En Syu,Yao-Feng Chang,Chen,Tian-Jian Chu,Hsin-Lu Chen,Chih-Hung Pan,Chih-Cheng Shih,Jin-Cheng Zheng,Simon M Sze

DOI: https://doi.org/10.1186/s11671-015-0740-7

2015-01-01

Nanoscale Research Letters

Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.
Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Shinhyun Choi,Yuchao Yang,Wei Lu

DOI: https://doi.org/10.1039/c3nr05016e

IF: 6.7

2014-01-01

Nanoscale

Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.
An Overview of Materials Issues in Resistive Random Access Memory

Linggang Zhu,Jian Zhou,Zhonglu Guo,Zhimei Sun

DOI: https://doi.org/10.1016/j.jmat.2015.07.009

IF: 8.589

2015-01-01

Journal of Materiomics

Abstract:Resistive random access memory (RRAM) is a very promising next generation non-volatile RAM, with quite significant advantages over the widely used silicon-based Flash memories. For RRAM, material with switchable resistance, working as the storage medium, is the most important part for the performance of the memory. In this review, as a start, some general hints for the materials selection are proposed. Then most recent studies on this emerging memory from the perspective of materials science are summarized: various materials with resistance switch (RS) behavior and the underlying mechanisms are introduced; as a complementary to the previous review articles, here the increasingly important role of computational materials science in the research of RRAM is presented and highlighted. By incorporating the framework of high-throughput calculation and multi-scale simulations, design process of new RRAM could be accelerated and more cost-effective.
Au doping effects in ZrO 2 -based resistance random access memory based on first-principles calculations

Xiaodi Wei,Wei Wei,GuoKun Ma,Cong Ye,Hao Zhou,Pin He,LiangPing Shen,ZhongBing Huang

DOI: https://doi.org/10.1360/n092017-00418

2018-01-01

Scientia Sinica Technologica

Abstract:Oxygen vacancy plays the critical role for resistive switching in transition metal oxide resistive random access memory (RRAM). First principles calculation was performed to investigate the band structure, density of states, the oxygen vacancy formation energy and the migration barriers energy of pure ZrO2 and Au doped ZrO2, and we analyzed the impact of Au doping in ZrO2-based RRAM. It was found that the localized impurity band at the Fermi level appeared in forbidden band and the band gap was significantly reduced in Au doped ZrO2, which improved the conductivity of ZrO2. By doping Au in ZrO2, the formation energy and the migration barriers energy of oxygen vacancy were significantly reduced, indicating that it was beneficial to the formation and migration of oxygen vacancy and decreased the forming voltage and the set voltage of ZrO2-based RRAM. The electron localization function was used to study the [001] direction oxygen vacancy cluster of ZrO2 supercell with an Au doped element. The results showed that the oxygen vacancy around the impurity formed an ordered conductive filament in the [001] direction.
Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Bin Gao,Jinfeng Kang,Yong Chen,Feifei Zhang,Baoqin Chen,Peng Huang,Lifeng Liu,Xiaoyan Liu,Yangyuan Wang,Xuan Anh Tran,Zhongrui Wang,Hongyu Yu,Albert Chin,Chen, Y.S.

DOI: https://doi.org/10.1109/IEDM.2011.6131573

2011-01-01

Abstract:A unified microscopic principle is proposed to clarify resistive switching behaviors of transition metal oxide based resistive random access memories (RRAM) for the first time. In this unified microscopic principle, both unipolar and bipolar switching characteristics of RRAM are correlated with the distribution of localized oxygen vacancies in the oxide switching layer, which is governed by the generation and recombination with dissociative oxygen ions. Based on the proposed microscopic principle, an atomistic simulation method is developed to evaluate critical memory performance, and successfully conduct the device optimization. The experimental data are well in line with the developed simulation method.
Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation for Multilevel Data Storage

Jinfeng Kang,Bin Gao,Bing Chen,Lifeng Liu, ,Hongyu Yu,Zhongrui Wang,Bin Yu

DOI: https://doi.org/10.1109/IMW.2012.6213664

2012-01-01

Abstract:A novel strategy based on defect engineering is proposed for high-performance multilevel data storage in oxide-based resistive random access memory (RRAM). Key innovations are (i) material-oriented cell engineering for desired modification of physical locations of generated oxygen vacancies in resistive switching layer and (ii) innovative operation scheme to control the distribution of oxygen vacancy conducting filaments during the switching. Excellent memory performance with four-level data storage is successfully demonstrated in hafnium-oxide-based RRAM devices, indicating the viability of the proposed engineering design strategy.
Synergistic Resistive Switching Mechanism Of Oxygen Vacancies And Metal Interstitials In Ta2o5

linggang zhu,jian zhou,zhonglu guo,zhimei sun

DOI: https://doi.org/10.1021/acs.jpcc.5b11080

2016-01-01

Abstract:Ta2O5 is extensively studied as a data-storage material for resistance random access memory (RRAM). The resistive switching (RS) in Ta2O5-based RRAM is generally believed to be due to the diffusion of oxygen vacancy (Vo) inside the oxide, while the role of metal interstitials is paid less attention. Here, on the basis of first-principles calculations, we show that the role of interstitial Ta (Ta-i) is competitive under the oxygen-poor condition and should also contribute to RS in Ta2O5. This is obvious by our calculated comparable energy barriers for the diffusion of Vo and Ta-i, which are 3.5 and 3.7 eV, respectively. Furthermore, the presence of electric field in working devices will enhance the migration of Ta-i due to its higher charge states compared to Vo. Meanwhile, Ta-i will introduce more defect states closer to the conduction bands and, thus, is more effective on tuning the electronic structure of Ta2O5. The present work unravels the contribution of Ta cations in RS of tantalum oxide based RRAM, presenting a synergistic RS mechanism of oxygen vacancies and metal interstitials, which should be helpful for optimizing and designing novel RRAM devices.
Optimizing endurance performance of Ga2O3 random resistive access memories by altering oxygen vacancy content

Wenjing Li,Jiaxian Wan,Zexin Tu,Hui Li,Hao Wu,Chang Liu

DOI: https://doi.org/10.1016/j.ceramint.2021.10.091

IF: 5.532

2022-02-01

Ceramics International

Abstract:In this work, we propose an effective way to improve the endurance performance of Ga2O3 resistive random access memories by doping ZnO. Excellent bipolar resistive switching behaviors have been observed in atomic-layer-deposited ZnO-doped Ga2O3 RRAMs, which exhibit large memory windows over 103 and retention time up to 104. Bipolar resistive switching behaviors can be explained by the formation or rupture of conductive filaments composed of Ag atoms and oxygen vacancies. Current – voltage curves suggest Ohmic conductance of the low resistance states, while the conductive mechanism of the high resistance states corresponds to the trap-assisted space charge limited conduction. Furthermore, the reason why the endurance performance of ZnO-doped Ga2O3 RRAMs is better than pure Ga2O3 RRAMs is analyzed.

materials science, ceramics
Performance Enhancement of Nonvolatile Resistive Switching Memory device Made from WOX/ZnO Bilayer Structure

Qi Xue,Liang Cao,Ke Zhang,Huiqin Ling,Yunwen Wu,Ming Li,Tao Hang

DOI: https://doi.org/10.1109/icept56209.2022.9872667

2022-01-01

Abstract:Among the various emerging storage technologies, resistive random-access memory (RRAM) has been identified as the most potential competitor for future application of nonvolatile information storage and neuromorphic computing. However, the reliability and performance of the device are still a considerable challenge. Here, a bilayer oxide structure WO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> /ZnO was applied as the functional layer of the RRAM. The WO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> layer prepared by physical deposition act as the oxygen vacancy source, and the ZnO layer fabricated by the combustion method serves as the resistive switching layer. Through oxygen vacancy engineering, the Pt/WO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> /ZnO/ITO exhibits outstanding performance, including extremely low programming voltage (0.7 V/−0.3 V), desirable memory window (˃10 2 ), and enhanced device reliability. This work provides a feasible method to optimize device performance and is expected to facilitate the commercialization of RRAM devices.
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Zhihua Yong,Karl-Magnus Persson,Mamidala Saketh Ram,Giulio D'Acunto,Yi Liu,Sandra Benter,Jisheng Pan,Zheshen Li,Mattias Borg,Anders Mikkelsen,Lars-Erik Wernersson,Rainer Timm

DOI: https://doi.org/10.1016/j.apsusc.2021.149386

IF: 6.7

2021-06-01

Applied Surface Science

Abstract:Resistive random access memory (RRAM) technologies based on non-volatile resistive filament redox switching oxides have the potential of drastically improving the performance of future mass-storage solutions. However, the physico-chemical properties of the TiN bottom metal electrode (BME) can significantly alter the resistive switching (RS) behavior of the oxygen-vacancy RRAM devices, yet the correlation between RS and the physico-chemical properties of TiN and HfOx/TiN interface remains unclear. Here, we establish this particular correlation via detailed material and electrical characterization for the purpose of achieving further performance enhancement of the stack integration. Two types of RRAM stacks were fabricated where the TiN BME was fabricated by physical vapor deposition (PVD) and atomic layer deposition (ALD), respectively. The HfOx layer in HfOx/PVD-TiN is more oxygen deficient than that of the HfOx/ALD-TiN because of more defective PVD-TiN and probably because pristine ALD-TiN has a thicker TiO2 overlayer. Higher concentration of oxygen vacancies induces a larger magnitude of band bending at the HfOx/PVD-TiN interface and leads to the formation of a higher Schottky barrier. Pulsed endurance measurements of up to 106 switches, with 10 μA ± 1.0 V pulses, demonstrate the potential of the studied ultra-thin-HfOx/TiN device stack for dense, large scale, and low-power memory integration.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Transition Metal Oxide Thin Films for Nonvolatile Resistive Random Access Memory Applications

Dinghua Bao

DOI: https://doi.org/10.2109/jcersj2.117.929

2009-01-01

Journal of the Ceramic Society of Japan

Abstract:Resistive random access memory (RRAM) based on reversible bistable resistance switching effect is attracting much attention for its superior properties such as nonvolatility, long retention time, simple device structure, small size, and low operating voltage. The unique resistance switching properties have been observed in some binary transition metal oxides, perovskite oxides, and organic molecular materials. This paper briefly reviews the status and new progress on binary transition metal oxide thin film materials such as NiO, TiO2, ZrO2, ZnO, and their multilayered thin films and metal nanocomposite thin films, for resistive random access memory applications, and also presents some of our own research work in this field. There is no doubt that study on transition metal oxide thin films for RRAM application will have been a topic of great interest in the forthcoming years, and it is expected that better understanding of physical mechanisms for the bistable resistance switching of the transition metal oxide thin films sandwiched between two metal electrodes can be achieved. (C)2009 The Ceramic Society of Japan. All rights reserved.
An Overview of Resistive Random Access Memory Devices

YingTao Li,ShiBing Long,Qi Liu,HangBing Lü,Su Liu,Ming Liu

DOI: https://doi.org/10.1007/s11434-011-4671-0

2011-01-01

Chinese Science Bulletin

Abstract:With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given.
Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

kuanchang chang,tsungming tsai,tingchang chang,hsinghua wu,yongen syu,gengwei chang,tianjian chu,guanru liu,yuting su,minchen chen,jhihhong pan,jianyu chen,chengwei tung,huichun huang,yahsiang tai,dershin gan,s m sze

DOI: https://doi.org/10.1109/LED.2013.2241725

2013-01-01

Abstract:Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into silicon oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped silicon oxide RRAM.
The storage mechanism of resisitive random access

WANG Yong,GUAN Wei-Hua,LONG Shi-Bing,LIU Ming,XIE Chang-Qing

2008-01-01

Physics

Abstract:Resisitive random access memories(RRAMs) are one of the most promising next-generation non-volatile memory devices,based on reversible switching between high and low resistance states by the application of an external electric field.They have been widely studied as a remarkable new type of memory device,due to their potential for scaling down beyond the 32nm node limit to replace current mainstream flash memory devices.However,controversy about the resistance switching mechanism of RRAMs has severely limited their further development and application.In this article certain essential models of the charge-transportation in the bulk material are described,and present theories explaining the resistance switching mechanism are also reviewed.
The Role of Oxygen Vacancies in the High Cycling Endurance and Quantum Conductance in BiVO 4 ‐based Resistive Switching Memory

Mengting Zhao,Xiaobing Yan,Long Ren,Mengliu Zhao,Fei Guo,Jincheng Zhuang,Yi Du,Weichang Hao

DOI: https://doi.org/10.1002/inf2.12085

2020-01-01

InfoMat

Abstract:Resistive random access memory (RRAM) has emerged as a new discipline promoting the development of new materials and devices toward a broad range of electronic and energy applications. Here, we realized a memristive device with weak dependence on the top electrodes and demonstrated the quantized conductance (QC) nature in BiVO(4)matrix. The electronic properties have been investigated by the measurements ofI-Vcurves, where the resistive switching (RS) phenomenon with stable switching ratio and excellent long-term retention capabilities are identified. Two more inert materials, TiN and Pd, are applied as the top electrodes to exclude the influence of electrodes on the RS states and QC behavior. The X-ray photoelectron spectroscopy results and transport measurements reveal that the conductive filament (CF) is composed by elemental bismuth. The naturally existed oxygen vacancies in BiVO(4)matrix plays as the role of catalyst in the formation and dissolution of CF in BiVO4-based RRAM device, which is the primary cause for the observed weak dependence of switching performance in this device on the type of top electrodes. Our results clearly illustrate that BiVO(4)could be a new idea platform to realize the high scalability, high cycling endurance, and multilevel storage RRAM devices.

Design Principles of Tuning Oxygen Vacancy Diffusion in Srzro3 for Resistance Random Access Memory

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Role of Oxygen Vacancies in the Resistive Switching of SrZrO3 for Resistance Random Access Memory

Ionic Doping Effect In Zro2 Resistive Switching Memory

Design and Application of Resistive Switching Devices for Novel Computing/Memory Architectures

A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

An Overview of Materials Issues in Resistive Random Access Memory

Au doping effects in ZrO 2 -based resistance random access memory based on first-principles calculations

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation for Multilevel Data Storage

Synergistic Resistive Switching Mechanism Of Oxygen Vacancies And Metal Interstitials In Ta2o5

Optimizing endurance performance of Ga2O3 random resistive access memories by altering oxygen vacancy content

Performance Enhancement of Nonvolatile Resistive Switching Memory device Made from WO<sub>X</sub>/ZnO Bilayer Structure

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Transition Metal Oxide Thin Films for Nonvolatile Resistive Random Access Memory Applications

An Overview of Resistive Random Access Memory Devices

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

The storage mechanism of resisitive random access

The Role of Oxygen Vacancies in the High Cycling Endurance and Quantum Conductance in BiVO 4 ‐based Resistive Switching Memory