Abstract:The surface-nitrided silicon nanocrystals (Si-NCs) floating gate nonvolatile memory (NVM) devices were fabricated by 0.13 mu m node CMOS technology. The surface-nitrided Si-NCs were formed in-situ by low-pressure chemical vapor deposition and followed by nitridation treatment in NH3 ambient. It is found that the nitridation treatment not only enhances the control effect of gate voltage on channel carriers by passivation of the Si-NCs surface defects but also suppresses releasing of the stored carriers among the neighboring Si-NCs and leakage from Si-NCs to channel through the tunneling oxide by a silicon nitride cover layer acted as potential barrier. Consequently, the storage carriers are fully discrete in the Si-NCs, which are different from that in the conventional poly-crystal Si or SONOS floating gate NVM devices. The surface-nitrided Si-NCs NVM devices show lower subthreshold swing value of 0.13V/decade, faster P/E speed characteristics of 1 mu s at +/- 7V, and good retention characteristics at room temperature. Furthermore, due to the improvement of the tunneling oxide quality by nitridation treatment, the stable memory window of 1.7V has been kept after 10(7) P/E cycles, showing superior endurance characteristics with the good retention characteristics. Our fabrication of surface-nitrided Si-NCs floating gate NVM is compatible with the standard CMOS technology, which may be employed in the 3-D NAND technology to further improve the device performance. (C) 2016 AIP Publishing LLC.

Performance Enhancement of Tisi2 Coated Si Nanocrystal Memory Device

Performance and reliability feature of nanocrystal memory devices

Formation of NiSi2/SiN compound nanocrystal for nonvolatile memory application

Formation of NiSi2/SiNX compound nanocrystal for nonvolatile memory application

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Formation of Cosi2/Cosixny Nanocrystals for Nonvolatile Memory Application

Titanium–tungsten Nanocrystals Embedded in a SiO2/Al2O3gate Dielectric Stack for Low-Voltage Operation in Non-Volatile Memory

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

Enhanced Retention Characteristic Of Nisi2/Sinx Compound Nanocrystal Memory

Performance and Retention Characteristics of Nanocrystalline Si Floating Gate Memory with an Al2O3 Tunnel Layer Fabricated by Plasma-Enhanced Atomic Layer Deposition

Improved performance of Si-NC memory using a novel two-step program scheme

Cmos Compatible Nonvolatile Memory Devices Based On Sio2/Cu/Sio2 Multilayer Films

Ferroelectric-carbon Nanotube Memory Devices.

A TiAl2O5 Nanocrystal Charge Trap Memory Device

Effect Of Control Oxide On The Performance Of Nanocrystalline Silicon Based Double-Barrier Floating Gate Memory Structure

Enhanced Memory Performance by Tailoring the Microstructural Evolution of (zro 2 ) 0.6 (sio 2 ) 0.4 Charge Trapping Layer in the Nanocrystallites-Based Charge Trap Flash Memory Cells

Improvement of retention and endurance characteristics of Si nanocrystal nonvolatile memory device

Simulation,Fabrication and Electrical Characteristics of Nanocrystal Floating Gate Memories

GeSi/Si Hetero‐nanocrystals and the Applications in MOSFET Memories

Optimization of Silicon Nanocrystals Growth Process by Low Pressure Chemical Vapor Deposition for Non-Volatile Memory Application

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications